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Comparison of Silicon Versus Gallium Nitride FETs for the Use in Power Inverters for Brushless DC Servo Motors

Gruber, Robin (2014) Comparison of Silicon Versus Gallium Nitride FETs for the Use in Power Inverters for Brushless DC Servo Motors. Bodo's power systems (03-14), pp. 62-68. Druckhaus Main-Echo GmbH & Co KG. ISSN 1863-5598

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Official URL: http://www.bodospower.com

Abstract

The DLR Institute for Robotics and Mechatronics compared silicon with gallium nitride based MOSFET technology for the use in low voltage brushless DC servo motor inverters. It could be demonstrated that it is possible to use GaN-FETs with an increased efficiency and without performance loss regarding output power, EMC and current sensing quality.

Item URL in elib:https://elib.dlr.de/88511/
Document Type:Article
Title:Comparison of Silicon Versus Gallium Nitride FETs for the Use in Power Inverters for Brushless DC Servo Motors
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Gruber, RobinRobin.Gruber (at) dlr.deUNSPECIFIED
Date:March 2014
Journal or Publication Title:Bodo's power systems
Refereed publication:No
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Page Range:pp. 62-68
Editors:
EditorsEmail
Arlt, Bodoeditor@bodospower.com
Publisher:Druckhaus Main-Echo GmbH & Co KG
ISSN:1863-5598
Status:Published
Keywords:GaN-Fets, Servo Motor 3-Phase-Brushless-Motor, Inverter
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Technik für Raumfahrtsysteme
DLR - Research theme (Project):R - Vorhaben Weiterentwicklung Robotik - Mechatronik und Dynamik
Location: Oberpfaffenhofen
Institutes and Institutions:Institute of Robotics and Mechatronics (since 2013) > Mechatronic Components and Systems
Deposited By: Gruber, Robin
Deposited On:04 Dec 2014 18:49
Last Modified:04 Dec 2014 18:49

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