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Crystallization process of perovskite type oxide thin films deposited by PLD without substrate heating: Influence of sputtering rate and densification-driven high tensile strain

Sata, Noriko and Shibata, Yoshikazu and Iguchi, Fumitada and Yugami, Hiroo (2015) Crystallization process of perovskite type oxide thin films deposited by PLD without substrate heating: Influence of sputtering rate and densification-driven high tensile strain. Solid State Ionics, 275, pp. 14-18. Elsevier. DOI: 10.1016/j.ssi.2015.02.005 ISSN 0167-2738

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Official URL: http://www.sciencedirect.com/science/journal/01672738/275

Abstract

Crystallization process in non-heating pulsed laser deposition (PLD) and the following post-annealing route for perovskite oxide thin film fabrication has been studied. Remarkable influence of sputtering rate on crystallization temperatures is demonstrated for BaZrO3 and SrZrO3 thin films in this process. Crystalline nuclei formation occurs randomly in the thin films deposited at a high sputtering rate which leads to the faster crystallization at a lower temperature, while it occurs predominantly at the substrate or interlayer interface at a higher temperature when the sputtering rate is very low, which is also reinforced by the atomic oxygen irradiation upon deposition. It should be noted that crystalline thin film synthesis of BaZrO3 is possible at a post-annealing temperature below200 °Cwhen the sputtering rate is relatively high. On the other hand, obtained thin films showhigh tensile strainwhich is not related to the difference in thermal expansion coefficient between substrate and thin film, but is found to be due to the densification upon crystallization. The tensile strain is relaxed when the thin films are annealed at 750 °C or above, while the strain is very stable at a temperature as low as 600 °C for 1 week.

Item URL in elib:https://elib.dlr.de/96209/
Document Type:Article
Title:Crystallization process of perovskite type oxide thin films deposited by PLD without substrate heating: Influence of sputtering rate and densification-driven high tensile strain
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Sata, NorikoDLRUNSPECIFIED
Shibata, YoshikazuTohoku UniversityUNSPECIFIED
Iguchi, FumitadaTohoku UniversityUNSPECIFIED
Yugami, HirooTohoku UniversityUNSPECIFIED
Date:21 February 2015
Journal or Publication Title:Solid State Ionics
Refereed publication:Yes
Open Access:Yes
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:275
DOI :10.1016/j.ssi.2015.02.005
Page Range:pp. 14-18
Publisher:Elsevier
ISSN:0167-2738
Status:Published
Keywords:Perovskite PLD Post-annealing Crystallization Proton conducting oxides Tensile strain
HGF - Research field:Energy
HGF - Program:Efficient Energy Conversion and Use (old)
HGF - Program Themes:Fuel Cells (old)
DLR - Research area:Energy
DLR - Program:E EV - Energy process technology
DLR - Research theme (Project):E - Electrochemical Processes (old)
Location: Stuttgart
Institutes and Institutions:Institute of Engineering Thermodynamics > Electrochemical Energy Technology
Deposited By: Metzger-Sata, Dr. Noriko
Deposited On:11 May 2015 13:49
Last Modified:31 Jul 2019 19:53

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