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Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon

Kovalevsky, K.A. and Abrosimov, N.V. and Zhukavin, R.Kh. and Pavlov, S.G. and Hübers, Heinz-Wilhelm and Tsyplenkov, V.V. and Shastin, V.N. (2015) Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon. Quantum Electronics, 45 (2), pp. 113-120. Turpion - Moscow Ltd.. DOI: 10.1070/QE2015v045n02ABEH015532 ISSN 1063-7818

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Official URL: http://www.turpion.org/php/paper.phtml?journal_id=qe&paper_id=15532

Abstract

This paper presents a brief overview of available experimental data on the characteristics of stimulated terahertz emission (4.9 – 6.4 THz) from optically excited neutral group V donors (phosphorus, antimony, arsenic and bismuth) in crystalline silicon subjected to uniaxial compressive strain along the [100] axis. Strain is shown to have a significant effect on the characteristics in question. Optimal strain depends on the dopant and may reduce the threshold pump intensity and improve lasing efficiency. We discuss possible mechanisms behind this effect and estimate the limiting output emission parameters.

Item URL in elib:https://elib.dlr.de/95495/
Document Type:Article
Title:Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Kovalevsky, K.A.Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Abrosimov, N.V.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIED
Zhukavin, R.Kh.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIED
Tsyplenkov, V.V.Institute for Physics of Microstructures, Russain Academy of SciencesUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Date:2015
Journal or Publication Title:Quantum Electronics
Refereed publication:Yes
Open Access:Yes
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:45
DOI :10.1070/QE2015v045n02ABEH015532
Page Range:pp. 113-120
Publisher:Turpion - Moscow Ltd.
ISSN:1063-7818
Status:Published
Keywords:silicon lasers, terahertz
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Transport
HGF - Program Themes:Traffic Management (old)
DLR - Research area:Transport
DLR - Program:V VM - Verkehrsmanagement
DLR - Research theme (Project):V - Optimode (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems
Deposited By: Pavlov, Dr. Sergey
Deposited On:09 Mar 2015 09:16
Last Modified:06 Sep 2019 15:15

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