Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon

Kovalevsky, K.A. and Abrosimov, N.V. and Zhukavin, R.Kh. and Pavlov, S.G. and Hübers, Heinz-Wilhelm and Tsyplenkov, V.V. and Shastin, V.N. (2015) Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon. Quantum Electronics, 45 (2), pp. 113-120. Turpion - Moscow Ltd.. doi: 10.1070/QE2015v045n02ABEH015532. ISSN 1063-7818.

PDF
1MB

Official URL: http://www.turpion.org/php/paper.phtml?journal_id=qe&paper_id=15532

Abstract

This paper presents a brief overview of available experimental data on the characteristics of stimulated terahertz emission (4.9 – 6.4 THz) from optically excited neutral group V donors (phosphorus, antimony, arsenic and bismuth) in crystalline silicon subjected to uniaxial compressive strain along the [100] axis. Strain is shown to have a significant effect on the characteristics in question. Optimal strain depends on the dopant and may reduce the threshold pump intensity and improve lasing efficiency. We discuss possible mechanisms behind this effect and estimate the limiting output emission parameters.

Item URL in elib:

https://elib.dlr.de/95495/

Document Type:

Article

Title:

Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon

Authors:

Authors	Institution or Email of Authors	Author's ORCID iD
Kovalevsky, K.A.	Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia	UNSPECIFIED
Abrosimov, N.V.	Leibniz-Institut für Kristallzüchtung (IKZ), Berlin	UNSPECIFIED
Zhukavin, R.Kh.	Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia	UNSPECIFIED
Pavlov, S.G.	UNSPECIFIED	UNSPECIFIED
Hübers, Heinz-Wilhelm	UNSPECIFIED	UNSPECIFIED
Tsyplenkov, V.V.	Institute for Physics of Microstructures, Russain Academy of Sciences	UNSPECIFIED
Shastin, V.N.	Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia	UNSPECIFIED

Date:

2015

Journal or Publication Title:

Quantum Electronics

Refereed publication:

Yes

Open Access:

Yes

Gold Open Access:

In SCOPUS:

Yes

In ISI Web of Science:

Yes

Volume:

DOI:

10.1070/QE2015v045n02ABEH015532

Page Range:

pp. 113-120

Publisher:

Turpion - Moscow Ltd.

ISSN:

1063-7818

Status:

Published

Keywords:

silicon lasers, terahertz

HGF - Research field:

Aeronautics, Space and Transport

HGF - Program:

Transport

HGF - Program Themes:

Traffic Management (old)

DLR - Research area:

Transport

DLR - Program:

V VM - Verkehrsmanagement

DLR - Research theme (Project):

V - Optimode (old)

Location:

Berlin-Adlershof

Institutes and Institutions:

Institute of Optical Sensor Systems

Deposited By:

Pavlov, Dr. Sergey

Deposited On:

09 Mar 2015 09:16

Last Modified:

06 Sep 2019 15:15

Repository Staff Only: item control page