elib
DLR-Header
DLR-Logo -> http://www.dlr.de
DLR Portal Home | Imprint | Privacy Policy | Contact | Deutsch
Fontsize: [-] Text [+]

Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures

Zhukavin, R.Kh. and Kovalevsky, K.A. and Orlov, M.L. and Tsyplenkov, V.V. and Bekin, N.A. and Yablonsky, A.N. and Yunin, P.A. and Pavlov, S.G. and Abrosimov, N.V. and Hübers, Heinz-Wilhelm and Radamson, H.H. and Shastin, V.N. (2015) Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures. Semiconductors, 49 (1), pp. 13-18. Springer. DOI: 10.1134/S1063782615010273 ISSN 1063-7826

[img] PDF - Registered users only
399kB

Official URL: http://link.springer.com/article/10.1134%2FS1063782615010273

Abstract

The results of measurements of the total terahertz�range photoluminescence of Group� V donors (phosphorus, antimony, bismuth, arsenic) in bulk silicon and SiGe/Si heterostructures depending on the excitation intensity are presented. The signal of bulk silicon was also measured as a function of uniaxial stress. The results of measurement of the dependence of the spontaneous emission intensity on the uniaxial stress is in rather good agreement with theoretical calculations of the relaxation times of excited states of donors in bulk silicon. Comparative measurements of the spontaneous emission from various strained heterostructures showed that the photoluminescence signal is caused by donor� doped silicon regions.

Item URL in elib:https://elib.dlr.de/95492/
Document Type:Article
Title:Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Zhukavin, R.Kh.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Kovalevsky, K.A.Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Orlov, M.L.Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Tsyplenkov, V.V.Institute for Physics of Microstructures, Russain Academy of SciencesUNSPECIFIED
Bekin, N.A.Institute for Physics of Microstructures, RAS, N.Novgorod, RussiaUNSPECIFIED
Yablonsky, A.N.Institute for Physics of Microstructures, RAS, N.Novgorod, RussiaUNSPECIFIED
Yunin, P.A.Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIED
Abrosimov, N.V.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIED
Radamson, H.H.Royal Institute of Technology, Kista, SwedenUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Date:2015
Journal or Publication Title:Semiconductors
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:49
DOI :10.1134/S1063782615010273
Page Range:pp. 13-18
Publisher:Springer
ISSN:1063-7826
Status:Published
Keywords:terahertz emission, SiGe heterostructures
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Transport
HGF - Program Themes:Traffic Management (old)
DLR - Research area:Transport
DLR - Program:V VM - Verkehrsmanagement
DLR - Research theme (Project):V - Optimode (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems
Deposited By: Pavlov, Dr. Sergey
Deposited On:09 Mar 2015 09:16
Last Modified:01 Dec 2018 19:51

Repository Staff Only: item control page

Browse
Search
Help & Contact
Information
electronic library is running on EPrints 3.3.12
Copyright © 2008-2017 German Aerospace Center (DLR). All rights reserved.