Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures

Zhukavin, R.Kh. and Kovalevsky, K.A. and Orlov, M.L. and Tsyplenkov, V.V. and Bekin, N.A. and Yablonsky, A.N. and Yunin, P.A. and Pavlov, S.G. and Abrosimov, N.V. and Hübers, Heinz-Wilhelm and Radamson, H.H. and Shastin, V.N. (2015) Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures. Semiconductors, 49 (1), pp. 13-18. Springer. doi: 10.1134/S1063782615010273. ISSN 1063-7826.

PDF - Only accessible within DLR - Published version
399kB

Official URL: http://link.springer.com/article/10.1134%2FS1063782615010273

Abstract

The results of measurements of the total terahertz�range photoluminescence of Group� V donors (phosphorus, antimony, bismuth, arsenic) in bulk silicon and SiGe/Si heterostructures depending on the excitation intensity are presented. The signal of bulk silicon was also measured as a function of uniaxial stress. The results of measurement of the dependence of the spontaneous emission intensity on the uniaxial stress is in rather good agreement with theoretical calculations of the relaxation times of excited states of donors in bulk silicon. Comparative measurements of the spontaneous emission from various strained heterostructures showed that the photoluminescence signal is caused by donor� doped silicon regions.

Item URL in elib:

https://elib.dlr.de/95492/

Document Type:

Article

Title:

Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures

Authors:

Authors	Institution or Email of Authors	Author's ORCID iD	ORCID Put Code
Zhukavin, R.Kh.	Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia	UNSPECIFIED	UNSPECIFIED
Kovalevsky, K.A.	Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia	UNSPECIFIED	UNSPECIFIED
Orlov, M.L.	Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia	UNSPECIFIED	UNSPECIFIED
Tsyplenkov, V.V.	Institute for Physics of Microstructures, Russain Academy of Sciences	UNSPECIFIED	UNSPECIFIED
Bekin, N.A.	Institute for Physics of Microstructures, RAS, N.Novgorod, Russia	UNSPECIFIED	UNSPECIFIED
Yablonsky, A.N.	Institute for Physics of Microstructures, RAS, N.Novgorod, Russia	UNSPECIFIED	UNSPECIFIED
Yunin, P.A.	Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia	UNSPECIFIED	UNSPECIFIED
Pavlov, S.G.	sergeij.pavlov (at) dlr.de	UNSPECIFIED	UNSPECIFIED
Abrosimov, N.V.	Leibniz-Institut für Kristallzüchtung (IKZ), Berlin	UNSPECIFIED	UNSPECIFIED
Hübers, Heinz-Wilhelm	Heinz-Wilhelm.Huebers (at) dlr.de	UNSPECIFIED	UNSPECIFIED
Radamson, H.H.	Royal Institute of Technology, Kista, Sweden	UNSPECIFIED	UNSPECIFIED
Shastin, V.N.	Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia	UNSPECIFIED	UNSPECIFIED

Date:

2015

Journal or Publication Title:

Semiconductors

Refereed publication:

Yes

Open Access:

Gold Open Access:

In SCOPUS:

Yes

In ISI Web of Science:

Yes

Volume:

DOI:

10.1134/S1063782615010273

Page Range:

pp. 13-18

Publisher:

Springer

ISSN:

1063-7826

Status:

Published

Keywords:

terahertz emission, SiGe heterostructures

HGF - Research field:

Aeronautics, Space and Transport

HGF - Program:

Transport

HGF - Program Themes:

Traffic Management (old)

DLR - Research area:

Transport

DLR - Program:

V VM - Verkehrsmanagement

DLR - Research theme (Project):

V - Optimode (old)

Location:

Berlin-Adlershof

Institutes and Institutions:

Institute of Optical Sensor Systems

Deposited By:

Pavlov, Dr. Sergey

Deposited On:

09 Mar 2015 09:16

Last Modified:

03 Sep 2026 09:25

Repository Staff Only: item control page