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Terahertz Stimulated Emission from Silicon Doped by Hydrogenlike Acceptors

Pavlov, S.G. and Deßmann, N. and Shastin, V.N. and Zhukavin, R.Kh. and Redlich, B. and Meer, A.F.G. van der and Mittendorff, M. and Winnerl, S. and Abrosimov, N.V. and Riemann, H. and Hübers, Heinz-Wilhelm (2014) Terahertz Stimulated Emission from Silicon Doped by Hydrogenlike Acceptors. Physical Review X, 4, 021009. American Physical Society. DOI: 10.1103/PhysRevX.4.021009 ISSN 2160-3308

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Abstract

Stimulated emission in the terahertz frequency range has been realized from boron acceptor centers in silicon. Population inversion is achieved at resonant optical excitation on the 1Γ+8 → 1Γ−7, 1Γ−6, 4Γ−8 intracenter transitions with a midinfrared free-electron laser. Lasing occurs on two intracenter transitions around 1.75 THz. The upper laser levels are the 1Γ−7, 1Γ−6, and 4Γ−8 states, and the lower laser level for both emission lines is the 2Γ+8 state. In contrast to n-type intracenter silicon lasers, boron-doped silicon lasers do not involve the excited states with the longest lifetimes. Instead, the absorption cross section for the pump radiation is the dominating factor. The four-level lasing scheme implies that the deepest even-parity boron state is the 2Γ+8 state and not the 1Γ+7 split-off ground state, as indicated by other experiments. This is confirmed by infrared absorption spectroscopy of Si:B.

Item URL in elib:https://elib.dlr.de/93222/
Document Type:Article
Title:Terahertz Stimulated Emission from Silicon Doped by Hydrogenlike Acceptors
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIED
Deßmann, N.nils.dessmann (at) dlr.deUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Zhukavin, R.Kh.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Redlich, B.FELIX Facility, Radboud University NijmegenUNSPECIFIED
Meer, A.F.G. van derFELIX Facility, Radboud University NijmegenUNSPECIFIED
Mittendorff, M.HZDRUNSPECIFIED
Winnerl, S.HZDRUNSPECIFIED
Abrosimov, N.V.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIED
Riemann, H.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIED
Date:2014
Journal or Publication Title:Physical Review X
Refereed publication:Yes
Open Access:Yes
Gold Open Access:Yes
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:4
DOI :10.1103/PhysRevX.4.021009
Page Range:021009
Publisher:American Physical Society
ISSN:2160-3308
Status:Published
Keywords:THz, stimulated emission, silicon
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Transport
HGF - Program Themes:Traffic Management (old)
DLR - Research area:Transport
DLR - Program:V VM - Verkehrsmanagement
DLR - Research theme (Project):V - Optimode (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Experimentelle Planetenphysik
Deposited By: Pavlov, Dr. Sergey
Deposited On:18 Dec 2014 10:54
Last Modified:30 May 2019 22:07

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