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Interplay of inversion-less and inversion-based terahertz stimulated intracenter emission in isotopically enriched silicon doped by bismuth

Pavlov, S.G. and Abrosimov, Nickolay and Deßmann, N. and Böttger, Ute and Redlich, B. and Meer, A.F.G. va der and Zhukavin, R.Kh. and Shastin, V.N. and Irmscher, K. and Riemann, H. and Hübers, Heinz-Wilhelm (2014) Interplay of inversion-less and inversion-based terahertz stimulated intracenter emission in isotopically enriched silicon doped by bismuth. In: Abstracts of the "Silicon-2014" Conference, p. 65. Silicon - 2014, 07.-12. Jul. 2014, Irkutsk, Russland. ISBN 978 5 94797 231 3

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Abstract

Two types of terahertz-range stimulated emission involving intracenter transitions of bismuth atoms in isotopically enriched silicon has been realized under optical excitation by mid-infrared free electron laser (FELIX Facility, Radboud, the Netherlands) at cryogenic temperatures, ~ 5K. In comparison with the similar stimulated emission observed for natural silicon crystals, strong interplay between Raman laser emission and inverted intracenter lasing has been observed. This competition is caused by interaction of particular donor levels those populations play a critical role in forming inverted electron distributions required for intracenter laser action versus dominant population of the ground impurity state (inversion-less), what is required for Raman Stokes lasing.

Item URL in elib:https://elib.dlr.de/93210/
Document Type:Conference or Workshop Item (Speech)
Title:Interplay of inversion-less and inversion-based terahertz stimulated intracenter emission in isotopically enriched silicon doped by bismuth
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIED
Abrosimov, NickolayLeibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIED
Deßmann, N.nils.dessmann (at) dlr.deUNSPECIFIED
Böttger, UteUte.Boettger (at) dlr.deUNSPECIFIED
Redlich, B.FELIX Facility, Radboud University, The NetherlandsUNSPECIFIED
Meer, A.F.G. va derFELIX Facility, Radboud University, The NetherlandsUNSPECIFIED
Zhukavin, R.Kh.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Irmscher, K.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIED
Riemann, H.Leibniz-Institute of Crystal Growth, BerlinUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIED
Date:2014
Journal or Publication Title:Abstracts of the "Silicon-2014" Conference
Refereed publication:No
Open Access:Yes
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Page Range:p. 65
ISBN:978 5 94797 231 3
Status:Published
Keywords:THz, stimulated emission, silicon
Event Title:Silicon - 2014
Event Location:Irkutsk, Russland
Event Type:national Conference
Event Dates:07.-12. Jul. 2014
Organizer:Geochemical Institute of the SB RAS
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Transport
HGF - Program Themes:Traffic Management (old)
DLR - Research area:Transport
DLR - Program:V VM - Verkehrsmanagement
DLR - Research theme (Project):V - Optimode (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Experimentelle Planetenphysik
Deposited By: Pavlov, Dr. Sergey
Deposited On:15 Dec 2014 09:23
Last Modified:31 Jul 2019 19:50

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