Interplay of inversion-less and inversion-based terahertz stimulated intracenter emission in isotopically enriched silicon doped by bismuth

Pavlov, S.G. and Abrosimov, Nickolay and Deßmann, N. and Böttger, Ute and Redlich, B. and Meer, A.F.G. va der and Zhukavin, R.Kh. and Shastin, V.N. and Irmscher, K. and Riemann, H. and Hübers, Heinz-Wilhelm (2014) Interplay of inversion-less and inversion-based terahertz stimulated intracenter emission in isotopically enriched silicon doped by bismuth. In: Abstracts of the "Silicon-2014" Conference, p. 65. Silicon - 2014, 2014-07-07 - 2014-07-12, Irkutsk, Russland. ISBN 978 5 94797 231 3.

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Abstract

Two types of terahertz-range stimulated emission involving intracenter transitions of bismuth atoms in isotopically enriched silicon has been realized under optical excitation by mid-infrared free electron laser (FELIX Facility, Radboud, the Netherlands) at cryogenic temperatures, ~ 5K. In comparison with the similar stimulated emission observed for natural silicon crystals, strong interplay between Raman laser emission and inverted intracenter lasing has been observed. This competition is caused by interaction of particular donor levels those populations play a critical role in forming inverted electron distributions required for intracenter laser action versus dominant population of the ground impurity state (inversion-less), what is required for Raman Stokes lasing.

Item URL in elib:

https://elib.dlr.de/93210/

Document Type:

Conference or Workshop Item (Speech)

Title:

Interplay of inversion-less and inversion-based terahertz stimulated intracenter emission in isotopically enriched silicon doped by bismuth

Authors:

Authors	Institution or Email of Authors	Author's ORCID iD	ORCID Put Code
Pavlov, S.G.	sergeij.pavlov (at) dlr.de	UNSPECIFIED	UNSPECIFIED
Abrosimov, Nickolay	Leibniz-Institut für Kristallzüchtung (IKZ), Berlin	UNSPECIFIED	UNSPECIFIED
Deßmann, N.	nils.dessmann (at) dlr.de	UNSPECIFIED	UNSPECIFIED
Böttger, Ute	Ute.Boettger (at) dlr.de	UNSPECIFIED	UNSPECIFIED
Redlich, B.	FELIX Facility, Radboud University, The Netherlands	UNSPECIFIED	UNSPECIFIED
Meer, A.F.G. va der	FELIX Facility, Radboud University, The Netherlands	UNSPECIFIED	UNSPECIFIED
Zhukavin, R.Kh.	Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia	UNSPECIFIED	UNSPECIFIED
Shastin, V.N.	Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia	UNSPECIFIED	UNSPECIFIED
Irmscher, K.	Leibniz-Institut für Kristallzüchtung (IKZ), Berlin	UNSPECIFIED	UNSPECIFIED
Riemann, H.	Leibniz-Institute of Crystal Growth, Berlin	UNSPECIFIED	UNSPECIFIED
Hübers, Heinz-Wilhelm	Heinz-Wilhelm.Huebers (at) dlr.de	UNSPECIFIED	UNSPECIFIED

Date:

2014

Journal or Publication Title:

Abstracts of the "Silicon-2014" Conference

Refereed publication:

Open Access:

Yes

Gold Open Access:

In SCOPUS:

In ISI Web of Science:

Page Range:

p. 65

ISBN:

978 5 94797 231 3

Status:

Published

Keywords:

THz, stimulated emission, silicon

Event Title:

Silicon - 2014

Event Location:

Irkutsk, Russland

Event Type:

national Conference

Event Start Date:

7 July 2014

Event End Date:

12 July 2014

Organizer:

Geochemical Institute of the SB RAS

HGF - Research field:

Aeronautics, Space and Transport

HGF - Program:

Transport

HGF - Program Themes:

Traffic Management (old)

DLR - Research area:

Transport

DLR - Program:

V VM - Verkehrsmanagement

DLR - Research theme (Project):

V - Optimode (old)

Location:

Berlin-Adlershof

Institutes and Institutions:

Institute of Planetary Research > Experimentelle Planetenphysik

Deposited By:

Pavlov, Dr. Sergey

Deposited On:

15 Dec 2014 09:23

Last Modified:

24 Apr 2024 19:59

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