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The effect of Cu addition on the thermoelectric properties of Cu2CdGeSe4

Chetty, Raju and Dadda, Jayaram and de Boor, Johannes and Müller, Eckhard and Mallik, Ramesh Chandra (2014) The effect of Cu addition on the thermoelectric properties of Cu2CdGeSe4. Intermetallics, 57, pp. 156-162. Elsevier. DOI: 10.1016/j.intermet.2014.10.015 ISSN 0966-9795

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Abstract

Recently, research in copper based quaternary chalcogenide materials has focused on the study of thermoelectric properties due to the complexity in the crystal structure. In the present work, stoichiometric quaternary chalcogenide compounds Cu2+xCd1−xGeSe4 (x = 0, 0.025, 0.05, 0.075, 0.1, 0.125) were prepared by solid state synthesis. The powder X-ray diffraction patterns of all the samples showed a tetragonal crystal structure with the space group I-42m of the main phase, whereas the samples with x = 0 and x = 0.025 revealed the presence of an orthorhombic phase in addition to the main phase as confirmed by Rietveld analysis. The elemental composition of all the samples characterized by Electron Probe Micro Analyzer showed a slight deviation from the nominal composition. The transport properties were measured in the temperature range of 300 K–723 K. The electrical conductivity of all the samples increased with increasing Cu content due to the enhancement of the hole concentration caused by the substitution of Cd (divalent) by Cu (monovalent). The positive Seebeck coefficient of all the samples in the entire temperature ranges indicates that holes are the majority carriers. The Seebeck coefficient of all the samples decreased with increasing Cu content and showed a reverse trend to the electrical conductivity. The total thermal conductivity of all the samples decreased with increasing temperature which was dominated by the lattice contribution. The maximum figure of merit ZT = 0.42 at 723 K was obtained for the compound Cu2.1Cd0.9GeSe4.

Item URL in elib:https://elib.dlr.de/92619/
Document Type:Article
Title:The effect of Cu addition on the thermoelectric properties of Cu2CdGeSe4
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Chetty, RajuThermoelectric Materials and Devices Laboratory, Department of Physics, Indian Institute of Science, Bangalore 560012, IndiaUNSPECIFIED
Dadda, JayaramGerman Aerospace Center, Institute of Materials Research, Köln, GermanyUNSPECIFIED
de Boor, JohannesGerman Aerospace Center, Institute of Materials Research, Köln, GermanyUNSPECIFIED
Müller, EckhardGerman Aerospace Center, Institute of Materials Research, Köln, Germany and Justus Liebig University Giessen, Institute of Inorganic and Analytical Chemistry, 35392 Giessen, GermanyUNSPECIFIED
Mallik, Ramesh ChandraThermoelectric Materials and Devices Laboratory, Department of Physics, Indian Institute of Science, Bangalore 560012, IndiaUNSPECIFIED
Date:13 November 2014
Journal or Publication Title:Intermetallics
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:57
DOI :10.1016/j.intermet.2014.10.015
Page Range:pp. 156-162
Publisher:Elsevier
ISSN:0966-9795
Status:Published
Keywords:Annealing, Thermoelectric properties, Microstructure, X-ray diffraction, Scanning electron microscopy
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Transport
HGF - Program Themes:Terrestrial Vehicles (old)
DLR - Research area:Transport
DLR - Program:V BF - Bodengebundene Fahrzeuge
DLR - Research theme (Project):V - Fahrzeugenergiesystem III (old)
Location: Köln-Porz
Institutes and Institutions:Institute of Materials Research > Thermoelectric Materials and Systems
Deposited By: Zabrocki, Dr. Knud
Deposited On:01 Dec 2014 10:10
Last Modified:06 Sep 2019 15:26

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