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Isotope effect on the lifetime of the 2 p0 state in phosphorus-doped silicon

Hübers, Heinz-Wilhelm and Pavlov, S.G. and Lynch, S. A. and Greenland, Th. and Litvinenko, K. L. and Murdin, B.N. and Redlich, Britta and van der Meer, A. F. G. and Riemann, H. and Abrosimov, N. V. and Becker, Peter and Pohl, H.-J. and Zhukavin, R.Kh. and Shastin, V.N. (2013) Isotope effect on the lifetime of the 2 p0 state in phosphorus-doped silicon. Physical Review B, 88. American Physical Society. DOI: 10.1103/PhysRevB.88.035201 ISSN 1098-0121

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Item URL in elib:https://elib.dlr.de/88141/
Document Type:Article
Title:Isotope effect on the lifetime of the 2 p0 state in phosphorus-doped silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIED
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIED
Lynch, S. A.London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH, United KingdomUNSPECIFIED
Greenland, Th.London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH, United KingdomUNSPECIFIED
Litvinenko, K. L.Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United KingdomUNSPECIFIED
Murdin, B.N.Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United KingdomUNSPECIFIED
Redlich, BrittaFOM-Institute for Plasma Physics, Nieuwegein, The NetherlandsUNSPECIFIED
van der Meer, A. F. G.FOM Institute for Plasma PhysicsUNSPECIFIED
Riemann, H.Institute of Crystal Growth, BerlinUNSPECIFIED
Abrosimov, N. V.Institute of Crystal GrowthUNSPECIFIED
Becker, PeterInstitut für Technische PhysikUNSPECIFIED
Pohl, H.-J.VITCON Projectconsult GmbH, Jena, GermanyUNSPECIFIED
Zhukavin, R.Kh.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Date:2013
Journal or Publication Title:Physical Review B
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:No
Volume:88
DOI :10.1103/PhysRevB.88.035201
Publisher:American Physical Society
ISSN:1098-0121
Status:Published
Keywords:Isotope phosphorus-doped silicon FELIX
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space Science and Exploration
DLR - Research area:Raumfahrt
DLR - Program:R EW - Erforschung des Weltraums
DLR - Research theme (Project):R - Vorhaben Exploration des Sonnensystems
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Experimentelle Planetenphysik
Deposited By: Stiebeler, Ulrike
Deposited On:26 May 2014 09:14
Last Modified:06 Sep 2019 15:29

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