Isotope effect on the lifetime of the 2 p0 state in phosphorus-doped silicon

Hübers, Heinz-Wilhelm and Pavlov, S.G. and Lynch, S. A. and Greenland, Th. and Litvinenko, K. L. and Murdin, B.N. and Redlich, Britta and van der Meer, A. F. G. and Riemann, H. and Abrosimov, N. V. and Becker, Peter and Pohl, H.-J. and Zhukavin, R.Kh. and Shastin, V.N. (2013) Isotope effect on the lifetime of the 2 p0 state in phosphorus-doped silicon. Physical Review B - Condensed Matter and Materials Physics, 88. American Physical Society. doi: 10.1103/PhysRevB.88.035201. ISSN 1098-0121.

Full text not available from this repository.

Item URL in elib:

https://elib.dlr.de/88141/

Document Type:

Article

Title:

Isotope effect on the lifetime of the 2 p0 state in phosphorus-doped silicon

Authors:

Authors	Institution or Email of Authors	Author's ORCID iD	ORCID Put Code
Hübers, Heinz-Wilhelm	Heinz-Wilhelm.Huebers (at) dlr.de	UNSPECIFIED	UNSPECIFIED
Pavlov, S.G.	sergeij.pavlov (at) dlr.de	UNSPECIFIED	UNSPECIFIED
Lynch, S. A.	London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH, United Kingdom	UNSPECIFIED	UNSPECIFIED
Greenland, Th.	London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH, United Kingdom	UNSPECIFIED	UNSPECIFIED
Litvinenko, K. L.	Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United Kingdom	UNSPECIFIED	UNSPECIFIED
Murdin, B.N.	Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United Kingdom	UNSPECIFIED	UNSPECIFIED
Redlich, Britta	FOM-Institute for Plasma Physics, Nieuwegein, The Netherlands	UNSPECIFIED	UNSPECIFIED
van der Meer, A. F. G.	FOM Institute for Plasma Physics	UNSPECIFIED	UNSPECIFIED
Riemann, H.	Institute of Crystal Growth, Berlin	UNSPECIFIED	UNSPECIFIED
Abrosimov, N. V.	Institute of Crystal Growth	UNSPECIFIED	UNSPECIFIED
Becker, Peter	Institut für Technische Physik	UNSPECIFIED	UNSPECIFIED
Pohl, H.-J.	VITCON Projectconsult GmbH, Jena, Germany	UNSPECIFIED	UNSPECIFIED
Zhukavin, R.Kh.	Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia	UNSPECIFIED	UNSPECIFIED
Shastin, V.N.	Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia	UNSPECIFIED	UNSPECIFIED

Date:

2013

Journal or Publication Title:

Physical Review B - Condensed Matter and Materials Physics

Refereed publication:

Yes

Open Access:

Gold Open Access:

In SCOPUS:

Yes

In ISI Web of Science:

Volume:

DOI:

10.1103/PhysRevB.88.035201

Publisher:

American Physical Society

ISSN:

1098-0121

Status:

Published

Keywords:

Isotope phosphorus-doped silicon FELIX

HGF - Research field:

Aeronautics, Space and Transport

HGF - Program:

Space

HGF - Program Themes:

Space Exploration

DLR - Research area:

Raumfahrt

DLR - Program:

R EW - Space Exploration

DLR - Research theme (Project):

R - Exploration of the Solar System

Location:

Berlin-Adlershof

Institutes and Institutions:

Institute of Planetary Research > Experimentelle Planetenphysik

Deposited By:

Stiebeler, Ulrike

Deposited On:

26 May 2014 09:14

Last Modified:

07 Nov 2023 08:46

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