Extremely fast electron capture in moderately doped germanium

Pavlov, S.G. and Deßmann, N. and Mittendorff, M. and Winnerl, S. and Zhukavin, R.Kh. and Tsyplenkov, V.V. and Shengurov, D.V. and Shastin, V.N. and Abrosimov, N.V. and Riemann, H. and Hübers, Heinz-Wilhelm (2013) Extremely fast electron capture in moderately doped germanium. The 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON), 2013-07-22 - 2013-07-26, Matsue, Japan.

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Abstract

We report the observation of ultrafast capture of free electrons (n-Ge:Sb:Ga) and holes (p-Ge:Ga:Sb) in moderately doped (net concentration > 2×10^15/cm3) Ge with high compensation, up to 50%. The typical range of the relaxation times for photoinduced (far-infrared photo- ionization) transmittance is in the range of 20-300 ps dependent on the sample characteristics and the far-infrared light intensity. Measurements of the photoinduced decay have been carried out by a contactless pump-probe technique at the infrared free electron laser facility at HZDR, Dresden. The observed relaxation times of free charge carriers are up to two orders of magnitude shorter than the ~ 2 ns response time observed in the photoconductive response of neutron transmutation doped isotope-fixed compensated p-Ge:Ga:Se:As. This indicates the potential for very fast broad band detection of infrared pulses by extrinsic photoconductive germanium detectors with optimized doping, compensation, geometry and an appropriate electrical readout circuit.

Item URL in elib:

https://elib.dlr.de/85089/

Document Type:

Conference or Workshop Item (Speech)

Title:

Extremely fast electron capture in moderately doped germanium

Authors:

Authors	Institution or Email of Authors	Author's ORCID iD	ORCID Put Code
Pavlov, S.G.	sergeij.pavlov (at) dlr.de	UNSPECIFIED	UNSPECIFIED
Deßmann, N.	nils.dessmann (at) dlr.de	UNSPECIFIED	UNSPECIFIED
Mittendorff, M.	FZD, Rossendorf	UNSPECIFIED	UNSPECIFIED
Winnerl, S.	FZD, Rossendorf	UNSPECIFIED	UNSPECIFIED
Zhukavin, R.Kh.	Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia	UNSPECIFIED	UNSPECIFIED
Tsyplenkov, V.V.	Institute for Physics of Microstructures, Russain Academy of Sciences	UNSPECIFIED	UNSPECIFIED
Shengurov, D.V.	Institute for Physics of Microstructures, Russain Academy of Sciences	UNSPECIFIED	UNSPECIFIED
Shastin, V.N.	Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia	UNSPECIFIED	UNSPECIFIED
Abrosimov, N.V.	Institute of Crystal Growth, Berlin	UNSPECIFIED	UNSPECIFIED
Riemann, H.	Institute of Crystal Growth, Berlin	UNSPECIFIED	UNSPECIFIED
Hübers, Heinz-Wilhelm	Heinz-Wilhelm.Huebers (at) dlr.de	UNSPECIFIED	UNSPECIFIED

Date:

2013

Refereed publication:

Open Access:

Yes

Gold Open Access:

In SCOPUS:

In ISI Web of Science:

Status:

Published

Keywords:

ultrafast detector, germanium, terahertz

Event Title:

The 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON)

Event Location:

Matsue, Japan

Event Type:

international Conference

Event Start Date:

22 July 2013

Event End Date:

26 July 2013

Organizer:

Institute of Industrial Science, University of Tokyo

HGF - Research field:

Aeronautics, Space and Transport

HGF - Program:

Transport

HGF - Program Themes:

Traffic Management (old)

DLR - Research area:

Transport

DLR - Program:

V VM - Verkehrsmanagement

DLR - Research theme (Project):

V - Project OPTIMODE (old)

Location:

Berlin-Adlershof

Institutes and Institutions:

Institute of Planetary Research > Experimentelle Planetenphysik

Deposited By:

Pavlov, Dr. Sergey

Deposited On:

19 Nov 2013 14:08

Last Modified:

24 Apr 2024 19:51

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