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Extremely fast electron capture in moderately doped germanium

Pavlov, S.G. and Deßmann, N. and Mittendorff, M. and Winnerl, S. and Zhukavin, R.Kh. and Tsyplenkov, V.V. and Shengurov, D.V. and Shastin, V.N. and Abrosimov, N.V. and Riemann, H. and Hübers, Heinz-Wilhelm (2013) Extremely fast electron capture in moderately doped germanium. The 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON), 22.-26.Jul.2013, Matsue, Japan.

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Abstract

We report the observation of ultrafast capture of free electrons (n-Ge:Sb:Ga) and holes (p-Ge:Ga:Sb) in moderately doped (net concentration > 2×10^15/cm3) Ge with high compensation, up to 50%. The typical range of the relaxation times for photoinduced (far-infrared photo- ionization) transmittance is in the range of 20-300 ps dependent on the sample characteristics and the far-infrared light intensity. Measurements of the photoinduced decay have been carried out by a contactless pump-probe technique at the infrared free electron laser facility at HZDR, Dresden. The observed relaxation times of free charge carriers are up to two orders of magnitude shorter than the ~ 2 ns response time observed in the photoconductive response of neutron transmutation doped isotope-fixed compensated p-Ge:Ga:Se:As. This indicates the potential for very fast broad band detection of infrared pulses by extrinsic photoconductive germanium detectors with optimized doping, compensation, geometry and an appropriate electrical readout circuit.

Item URL in elib:https://elib.dlr.de/85089/
Document Type:Conference or Workshop Item (Speech)
Title:Extremely fast electron capture in moderately doped germanium
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIED
Deßmann, N.nils.dessmann (at) dlr.deUNSPECIFIED
Mittendorff, M.FZD, RossendorfUNSPECIFIED
Winnerl, S.FZD, RossendorfUNSPECIFIED
Zhukavin, R.Kh.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Tsyplenkov, V.V.Institute for Physics of Microstructures, Russain Academy of SciencesUNSPECIFIED
Shengurov, D.V.Institute for Physics of Microstructures, Russain Academy of SciencesUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Abrosimov, N.V.Institute of Crystal Growth, BerlinUNSPECIFIED
Riemann, H.Institute of Crystal Growth, BerlinUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIED
Date:2013
Refereed publication:No
Open Access:Yes
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Status:Published
Keywords:ultrafast detector, germanium, terahertz
Event Title:The 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON)
Event Location:Matsue, Japan
Event Type:international Conference
Event Dates:22.-26.Jul.2013
Organizer:Institute of Industrial Science, University of Tokyo
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Transport
HGF - Program Themes:Traffic Management (old)
DLR - Research area:Transport
DLR - Program:V VM - Verkehrsmanagement
DLR - Research theme (Project):V - Project OPTIMODE (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Experimentelle Planetenphysik
Deposited By: Pavlov, Dr. Sergey
Deposited On:19 Nov 2013 14:08
Last Modified:31 Jul 2019 19:42

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