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The physical principles of terahertz silicon lasers based on intracenter transitions

Pavlov, S.G. and Zhukavin, R.Kh. and Shastin, V.N. and Hübers, Heinz-Wilhelm (2013) The physical principles of terahertz silicon lasers based on intracenter transitions. physica status solidi (b), 250 (1), pp. 9-36. Wiley-VCH Verlag GmbH & Co. KGaA. DOI: 10.1002/pssb.201248322

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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssb.201248322/abstract;jsessionid=EE616CE5EC91CC63A24144452706B896.d04t04

Abstract

The first silicon laser has been reported in the year 2000. It is based on impurity transitions of the hydrogen-like phosphorus donor in monocrystalline silicon. Several lasers based on other group-V donors in silicon have been demonstrated since then. These lasers operate at low lattice temperatures under optical pumping by a mid-infrared laser and emit light at discrete wavelengths in the range from 50 µm to 230 µm (between 1.2 THz and 6.9 THz). Dipole-allowed optical transitions between particular excited states of group-V substitutional donors are utilized for donor-type terahertz (THz) silicon lasers. Population inversion is achieved due to specific electron-phonon interactions inside the impurity atom. This results in long-living and short-living excited states of the donor centers. Another type of the THz laser utilizes stimulated resonant Raman-type scattering of photons by a Raman-active intracenter electronic transition. By varying the pump laser frequency, the frequency of the Raman intracenter silicon laser can be continuously changed between at least 4.5 THz and 6.4 THz. The gain of the donor and Raman-type THz silicon lasers is in the order of 0.5 cm-1 to 10 cm-1 which is similar to the net gain realized in THz quantum cascade lasers and infrared Raman silicon lasers. In addition, fundamental aspects of the laser process provide new information about the peculiarities of electronic capture by shallow impurity centers in silicon, lifetimes of nonequilibrium carriers in excited impurity states, and electron-phonon interaction.

Item URL in elib:https://elib.dlr.de/80280/
Document Type:Article
Title:The physical principles of terahertz silicon lasers based on intracenter transitions
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIED
Zhukavin, R.Kh.Institute for Physics of Microstructures, RAS, N.Novgorod, RussiaUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIED
Date:2013
Journal or Publication Title:physica status solidi (b)
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Volume:250
DOI :10.1002/pssb.201248322
Page Range:pp. 9-36
Publisher:Wiley-VCH Verlag GmbH & Co. KGaA
Status:Published
Keywords:silicon laser, terahertz
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Transport
HGF - Program Themes:Traffic Management (old)
DLR - Research area:Transport
DLR - Program:V VM - Verkehrsmanagement
DLR - Research theme (Project):V - Projekt FAMOUS 2 (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Experimentelle Planetenphysik
Deposited By: Pavlov, Dr. Sergey
Deposited On:08 Jan 2013 09:54
Last Modified:01 Dec 2018 19:48

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