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Spin-orbit interaction and group-V donor lasing from silicon

Shastin, V.N. and Zhukavin, R.Kh. and Kovalevsky, K.A. and Tsyplenkov, V.V. and Pavlov, S.G. and Abrosimov, N.V. and Riemann, H. and Hübers, Heinz-Wilhelm (2012) Spin-orbit interaction and group-V donor lasing from silicon. ICPS 2012, 29. Jul. – 03. Aug. 2012, Zürich, Schweiz.

Full text not available from this repository.

Abstract

In this report we focus on the spin-orbit interaction which lifts the degeneracy of the 1s(T2) multiplet of bismuth (Bi) and antimony (Sb) donors in silicon. As experimentally shown it influences on THz laser spectrum of pointed impurity centers under their optical CO2 laser excitation. Note here that in unstressed silicon crystal stimulated emission is based on the 2p(+/-) -1s(T2) intracenter transitions in Bi donor and the 2p0-1s(T2) transitions in Sb. Special attention is paid to the influence of the axial compression stress applied along [100] and [110] crystallographic axes on the laser states and laser frequencies. As shown the axial stress in Si:Bi and Si:Sb shifts the laser lines that has not been observed for Si:P and Si:As where the spin-orbit effect is negligible. In addition in Si:Bi the [100] stress higher than 2kbar switches the upper laser state to the 2p0. Moreover spectrum measurements demonstrate that Bi donors in stressed silicon lase on the states bounded to the upper 4-delta valleys of the conduction band. The experimental data are discussed and the laser frequencies compared with theoretical calculations of donor energy levels.

Item URL in elib:https://elib.dlr.de/78305/
Document Type:Conference or Workshop Item (Poster)
Title:Spin-orbit interaction and group-V donor lasing from silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Zhukavin, R.Kh.Institute for Physics of Microstructures, RAS, N.Novgorod, RussiaUNSPECIFIED
Kovalevsky, K.A.Institute for Physics of Microstructures, RAS, N.Novgorod, RussiaUNSPECIFIED
Tsyplenkov, V.V.Institute for Physics of Microstructures, RAS, N.Novgorod, RussiaUNSPECIFIED
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIED
Abrosimov, N.V.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIED
Riemann, H.Institute of Crystal Growth, BerlinUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIED
Date:2012
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Status:Published
Keywords:silicon, spin-orbit interaction
Event Title:ICPS 2012
Event Location:Zürich, Schweiz
Event Type:international Conference
Event Dates:29. Jul. – 03. Aug. 2012
Organizer:ETH, Zürich
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Transport
HGF - Program Themes:Traffic Management (old)
DLR - Research area:Transport
DLR - Program:V VM - Verkehrsmanagement
DLR - Research theme (Project):V - Projekt FAMOUS 2 (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Experimentelle Planetenphysik
Deposited By: Pavlov, Dr. Sergey
Deposited On:12 Nov 2012 07:23
Last Modified:01 Dec 2018 19:48

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