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Multi-channel electron intracenter relaxation in hydrogen-like donors in silicon

Pavlov, S.G. and Abrosimov, N.V. and Riemann, H. and Shastin, V.N. and Zhukavin, R.Kh. and Tsyplenkov, V.V. and Hovenier, J.N. and Carder, D.A. and Redlich, B. and Meer, A.F.G. van der and Hübers, Heinz-Wilhelm (2012) Multi-channel electron intracenter relaxation in hydrogen-like donors in silicon. ICPS 2012, 29. Jul. – 03. Aug. 2012, Zürich, Schweiz.

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Abstract

Electronic relaxation on ionized and neutral impurity centers in silicon has been thoroughly studied over last 60 years. Because electronic capture in silicon determines speed and efficiency of optoelectronic and electronic devices this study was mostly driven by silicon-based electronics. Nowadays, an understanding of relaxation processes in doped silicon becomes actual for the development of impurity-based silicon lasers. For a long time the cascade model of electronic capture has been accepted as mostly adequate for description of intracenter relaxation in silicon. The cascade model based on the assumption that a free carrier is captured first in a highly excited state with a large orbit radius. Then the carriers go down the ‘‘ladder’’ of closely spaced energy levels under simultaneous emission/absorption of acoustic phonons. We have carried out experiments on intracenter excitation of silicon crystals doped by hydrogen-like donors. The analysis of observed emission spectra of the n-Si terahertz intracenter lasers together with the laser thresholds as well as empirical data for lifetimes of particular excited states allows to estimate different schemes of intracenter relaxation. The most important result is evidence of different specific channels for electron relaxation through low lying donor states. The dominating relaxation channels strongly depend on the initial energy distribution of the nonequilibrium carriers. A relaxation step may exceed not only the energy gap to an adjacent lower-lying donor level but also the Lax´s characteristic energy step as set by the energy and momentum conservation requirements for intravalley acoustic phonons. The latter indicates on significant contribution of intervalley phonons for such a relaxation that fits to the theoretical calculation of relaxation rates in n-Si with assistance of intervalley acoustic phonons. Intracenter relaxation rates of a number of channels have been estimated from experimental data. The fastest channels for intracenter relaxation onto the ground state of hydrogen-like donors have characteristic relaxation rates above 1e10/s, and in the case of resonant interaction of donors with intervalley phonons – above 1e11/s. Multi-channel relaxation scheme can explain experimentally observed relatively short lifetimes of nonequilibrium electronic distributions in excited donor states of Si:P and Si:As: 100-205 ps.

Item URL in elib:https://elib.dlr.de/78302/
Document Type:Conference or Workshop Item (Poster)
Title:Multi-channel electron intracenter relaxation in hydrogen-like donors in silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIED
Abrosimov, N.V.Institute of Crystal Growth, BerlinUNSPECIFIED
Riemann, H.Institute of Crystal Growth, BerlinUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Zhukavin, R.Kh.Institute for Physics of Microstructures, RAS, N.Novgorod, RussiaUNSPECIFIED
Tsyplenkov, V.V.Institute for Physics of Microstructures, Russain Academy of SciencesUNSPECIFIED
Hovenier, J.N.Universität Delft, NLUNSPECIFIED
Carder, D.A.FOM-Institute for Plasma Physics, Nieuwegein, The NetherlandsUNSPECIFIED
Redlich, B.FOM Institute for Plasma PhysicsUNSPECIFIED
Meer, A.F.G. van derFOM-Institute for Plasma Physics, Rijnhuizen, Nieuwegein, The NetherlandsUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIED
Date:2012
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Status:Published
Keywords:silicon, electronic relaxation
Event Title:ICPS 2012
Event Location:Zürich, Schweiz
Event Type:international Conference
Event Dates:29. Jul. – 03. Aug. 2012
Organizer:ETH, Zürich
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Transport
HGF - Program Themes:Traffic Management (old)
DLR - Research area:Transport
DLR - Program:V VM - Verkehrsmanagement
DLR - Research theme (Project):V - Projekt FAMOUS 2 (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Experimentelle Planetenphysik
Deposited By: Pavlov, Dr. Sergey
Deposited On:09 Nov 2012 11:23
Last Modified:01 Dec 2018 19:48

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