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Stimulated far-infrared emission from boron acceptor centers in silicon

Pavlov, S.G. and Hübers, Heinz-Wilhelm and Eichholz, René and Deßmann, N. and Shastin, V.N. and Zhukavin, R.Kh. and Redlich, B. and Meer, A.F.G. van der (2012) Stimulated far-infrared emission from boron acceptor centers in silicon. ICPS 2012, 29. Jul. – 03. Aug. 2012, Zürich, Schweiz.

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Abstract

We report observation of far-infrared stimulated emission from intracenter transitions of boron doped silicon under mid-infrared optical pumping at low lattice temperature. While terahertz lasing has been demonstrated for all group-V hydrogen-like donors in silicon under photoionization and intracenter excitation of donors, formation of populated inversion between excited states of shallow acceptors suffered from relatively lower energy gaps between particular excited states permitting dipole optical intracenter transitions. Resonant intracenter excitation from the ground state into excited (7-0), (6-0) and (5-0) of boron acceptors in silicon, as shown, enable four-level lasing mechanism at moderate optical pump powers. Si:B laser operates at (7-0)-(8+1) and (6-0)-(8+1) transitions under the p3/2 valence band, the corresponding emission wavelengths are 172.3 µm and 171.6 µm. Contradictory to most of n-type silicon lasers, the population inversion mechanism in Si:B utilizes as an upper laser level the state which has not the longest lifetime, but favourites from four-level lasing scheme. Determination of binding energy of excited (8+1) state from Si:B laser emission spectra proves the experimental values previously obtained by indirect spectroscopic techniques.

Item URL in elib:https://elib.dlr.de/78301/
Document Type:Conference or Workshop Item (Poster)
Title:Stimulated far-infrared emission from boron acceptor centers in silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIED
Hübers, Heinz-WilhelmHeinz-Wilhelm.Huebers (at) dlr.deUNSPECIFIED
Eichholz, Renérene.eichholz (at) dlr.deUNSPECIFIED
Deßmann, N.nils.dessmann (at) dlr.deUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Zhukavin, R.Kh.Institute for Physics of Microstructures, RAS, N.Novgorod, RussiaUNSPECIFIED
Redlich, B.FOM-Institute for Plasma Physics, Nieuwegein, The NetherlandsUNSPECIFIED
Meer, A.F.G. van derFOM-Institute for Plasma Physics, Rijnhuizen, Nieuwegein, The NetherlandsUNSPECIFIED
Date:2012
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Status:Published
Keywords:silicon, laser, far-infrared
Event Title:ICPS 2012
Event Location:Zürich, Schweiz
Event Type:international Conference
Event Dates:29. Jul. – 03. Aug. 2012
Organizer:ETH, Zürich
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Transport
HGF - Program Themes:Traffic Management (old)
DLR - Research area:Transport
DLR - Program:V VM - Verkehrsmanagement
DLR - Research theme (Project):V - Projekt FAMOUS 2 (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Experimentelle Planetenphysik
Deposited By: Pavlov, Dr. Sergey
Deposited On:09 Nov 2012 10:48
Last Modified:01 Dec 2018 19:48

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