Bismuth-doped intracenter silicon laser under magnetic field: Deviation from the linear Zeeman effect at low fields

Abstract

Zeeman spectroscopy of hydrogen-like shallow impurities in elemental semiconductors has revealed a splitting of the degenerated excited states with magnetic quantum number m = +-1 at low magnetic fields (B<3T). The frequency shifts of impurity absorption transitions originating from the unsplitted ground state depend linearly on the magnetic field. Spectral analysis of the Si:Bi laser emission lines (originating from intracenter transitions 2p+- to 1s(E) and 2p+- to 1s(T2) at a temperature of ~5K, indicate a deviation of the magnetic field dependence from the linear Zeeman splitting at low B < 0.4-0.6 T which is not related to resonator mode features. In order to investigate this further absorption spectroscopy of the 1s(E)-2p+- and 1s(T2)-2p+- transitions has been carried out at temperatures around 90 K, i.e. under conditions of thermal population of the orbit-splitted excited bismuth states.