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Spin-orbit coupling effect on bismuth donor lasing in stressed silicon

Zhukavin, R. Kh. and Kovalevsky, K. A. and Tsyplenkov, V. V. and Shastin, V.N. and Pavlov, S. G. and Hübers, H.-W. and Riemann, H. and Abrosimov, N. V. and Ramdas, A. K. (2011) Spin-orbit coupling effect on bismuth donor lasing in stressed silicon. Applied Physics Letters, 99, p. 171108. American Institute of Physics (AIP). DOI: 10.1063/1.3656023

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Official URL: http://link.aip.org/link/doi/10.1063/1.3656023

Abstract

We report a study on terahertz lasing from optically excited Bi donors in axially compressed silicon crystal. The laser frequency and the radiated power were measured versus stress applied along the [100] crystal axis. As shown, Bi donors lase at the optical transitions from the 2p+/- states to the 1s(E) state or/and to the spin-orbit split 1s(T2:G8) and 1s(T2:G7) states, and by fitting the crystal strain, one can shift the laser transitions and change the output power. The experiment is explained by the dependence of spin-orbit splitting and phonon-assisted relaxation of donor states on crystal distortion.

Item URL in elib:https://elib.dlr.de/73407/
Document Type:Article
Title:Spin-orbit coupling effect on bismuth donor lasing in stressed silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Zhukavin, R. Kh.Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Kovalevsky, K. A.Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Tsyplenkov, V. V.Institute for Physics and Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Pavlov, S. G.sergeij.pavlov (at) dlr.deUNSPECIFIED
Hübers, H.-W.heinz-wilhelm.huebers (at) dlr.deUNSPECIFIED
Riemann, H.Institute of Crystal Growth, BerlinUNSPECIFIED
Abrosimov, N. V.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIED
Ramdas, A. K. Purdue University, West Lafayette, USAUNSPECIFIED
Date:2011
Journal or Publication Title:Applied Physics Letters
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:99
DOI :10.1063/1.3656023
Page Range:p. 171108
Publisher:American Institute of Physics (AIP)
Status:Published
Keywords:terahertz silicon laser
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Transport
HGF - Program Themes:Traffic Management (old)
DLR - Research area:Transport
DLR - Program:V VM - Verkehrsmanagement
DLR - Research theme (Project):V - FAMOUS 2 (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:10 Jan 2012 10:50
Last Modified:08 Mar 2018 18:52

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