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Stress-controlled phonon-impurity resonances in terahertz silicon lasers

Pavlov, S.G. (2010) Stress-controlled phonon-impurity resonances in terahertz silicon lasers. In: Phonon Engineering for Enhanced Materials Solutions--Theory and Applications (1221E), 1221-CC09-02. Material Research Society Symposium, 30. Nov.- 4. Dec. 2009, Boston, USA.

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Optically pumped terahertz silicon lasers utilize transitions between shallow donor states at low lattice temperatures. Population inversion in these lasers is built-up due to selective relaxation routes of optically excited electrons into impurity ground state. Each relaxation step of the electron occurs under assistance of intervalley and intravalley phonons with energies approaching the particular energy gaps between interacting excited donor states. These impurity phonon interactions determine, at the end, the lifetimes of the laser levels, and, therefore, efficiency of intracenter silicon lasers. Deformation of silicon crystal is a classical example of controllable influence on energy spectrum of shallow donor levels due to specific splitting and shifts of conduction band valleys. Using moderate (up to 400 MPa) external uniaxial deformation of a crystal, one can radically modify the impurity spectra while the phononic spectra remain almost unchanged. We have demonstrated significant improvement of efficiency for intracenter silicon lasers followed by changes of lifetime for the upper and the lower laser levels due to moving the impurity levels either into or out of resonance with corresponding intervalley phonon frequencies.

Item URL in elib:https://elib.dlr.de/67341/
Document Type:Conference or Workshop Item (Speech)
Additional Information:doi: 10.1557/PROC-1221-CC09-02
Title:Stress-controlled phonon-impurity resonances in terahertz silicon lasers
AuthorsInstitution or Email of AuthorsAuthor's ORCID iD
Pavlov, S.G.sergeij.pavlov (at) dlr.deUNSPECIFIED
Journal or Publication Title:Phonon Engineering for Enhanced Materials Solutions--Theory and Applications
Open Access:No
Gold Open Access:No
In ISI Web of Science:No
Page Range:1221-CC09-02
Series Name:MRS Proceedings
Keywords:THz, silicon, laser, uniaxially stressed
Event Title:Material Research Society Symposium
Event Location:Boston, USA
Event Type:international Conference
Event Dates:30. Nov.- 4. Dec. 2009
Organizer:Material Research Society
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Transport
HGF - Program Themes:Traffic Management (old)
DLR - Research area:Transport
DLR - Program:V VM - Verkehrsmanagement
DLR - Research theme (Project):V - FAMOUS (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:04 Jan 2011 17:52
Last Modified:12 Dec 2013 21:09

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