elib
DLR-Header
DLR-Logo -> http://www.dlr.de
DLR Portal Home | Imprint | Privacy Policy | Contact | Deutsch
Fontsize: [-] Text [+]

Lifetimes of operating states in terahertz intracenter silicon lasers

Tsyplenkov, V. V. and Zhukavin, R. Kh. and Kovalevsky, K. A. and Shastin, V. N. and Hübers, H.-W. and Pavlov, S. G. and Abrosimov, N. V. and Phillips, P. J. and Carder, D. A. (2009) Lifetimes of operating states in terahertz intracenter silicon lasers. In: Terahertz and Mid Infrared Radiation: Basic Research and Practical Application, pp. 85-86. Institute of Electrical and Electronics Engineers. NATO Advanced Research Workshop on Terahertz and Mid Infrared Radiation: Basic Research and Applications, 3-6 Nov 2009, Turunç-Marmaris, Turkey. ISBN 978-1-4244-3850-1

[img] PDF - Registered users only
165kB

Abstract

The result on theoretical and experimental study of principal states relaxation for terahertz range silicon laser based on phosphor and arsenic shallow donor centers are reported. Numerical simulations show that f-TA and f-LA intervalley phonons scattering dominates in laser state relaxation. The theoretical values of relaxation rates fit well to the experimental data obtained by the pump-und-probe modulated transmission technique.

Item URL in elib:https://elib.dlr.de/62270/
Document Type:Conference or Workshop Item (Poster)
Additional Information:Spätere Veröffentlichung zusätzlich in der Reihe: NATO Science for Peace and Security Series B: Physics and Biophysics, Springer Verlag
Title:Lifetimes of operating states in terahertz intracenter silicon lasers
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Tsyplenkov, V. V.Institute for Physics of Microstructures, Russian Academy of SciencesUNSPECIFIED
Zhukavin, R. Kh.Institute for Physics of Microstructures, Russian Academy of SciencesUNSPECIFIED
Kovalevsky, K. A.Institute for Physics of Microstructures, Russian Academy of SciencesUNSPECIFIED
Shastin, V. N.Institute for Physics of Microstructures, Russian Academy of SciencesUNSPECIFIED
Hübers, H.-W.UNSPECIFIEDUNSPECIFIED
Pavlov, S. G.UNSPECIFIEDUNSPECIFIED
Abrosimov, N. V.Leibniz Institute for Crystal Growth, BerlinUNSPECIFIED
Phillips, P. J.FOM-Institute for Plasma Physics, NieuwegeinUNSPECIFIED
Carder, D. A.FOM-Institute for Plasma Physics, NieuwegeinUNSPECIFIED
Date:November 2009
Journal or Publication Title:Terahertz and Mid Infrared Radiation: Basic Research and Practical Application
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Page Range:pp. 85-86
Publisher:Institute of Electrical and Electronics Engineers
ISBN:978-1-4244-3850-1
Status:Published
Keywords:silicon lasers life times terahertz
Event Title:NATO Advanced Research Workshop on Terahertz and Mid Infrared Radiation: Basic Research and Applications
Event Location:Turunç-Marmaris, Turkey
Event Type:Workshop
Event Dates:3-6 Nov 2009
Organizer:IEEE
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:06 Jan 2010 09:23
Last Modified:12 Dec 2013 20:50

Repository Staff Only: item control page

Browse
Search
Help & Contact
Information
electronic library is running on EPrints 3.3.12
Copyright © 2008-2017 German Aerospace Center (DLR). All rights reserved.