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Terahertz lasing from silicon by infrared Raman scattering on bismuth centers

Pavlov, S. G. and Böttger, U. and Eichholz, R. and Abrosimov, N. V. and Riemann, H. and Shastin, V. N. and Redlich, B. and Hübers, H.-W. (2009) Terahertz lasing from silicon by infrared Raman scattering on bismuth centers. Applied Physics Letters, 95, pp. 201110-1. American Institute of Physics (AIP). DOI: 10.1063/1.3266837

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Official URL: http://link.aip.org/link/?APPLAB/95/201110/1

Abstract

Stimulated emission at terahertz frequencies (4.5–5.8 THz) has been realized by electronic Raman scattering of infrared radiation on bismuth donor centers in silicon at low temperatures. The Stokes shift of the observed laser emission is 40.53 meV which corresponds to the bismuth intracenter transition between the 1s(A1) ground state and the excited 1s(E) state. The laser has a low optical threshold and the largest frequency coverage in comparison with other Raman silicon lasers based on shallow donor centers. Time-resolved pump spectra enable the separation of donor and Raman lasing.

Item URL in elib:https://elib.dlr.de/62244/
Document Type:Article
Title:Terahertz lasing from silicon by infrared Raman scattering on bismuth centers
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, S. G.UNSPECIFIEDUNSPECIFIED
Böttger, U.UNSPECIFIEDUNSPECIFIED
Eichholz, R.UNSPECIFIEDUNSPECIFIED
Abrosimov, N. V.Institute of Crystal GrowthUNSPECIFIED
Riemann, H.Institute of Crystal GrowthUNSPECIFIED
Shastin, V. N.Institute for Physics of Microstructures, Russian Academy of SciencesUNSPECIFIED
Redlich, B.FOM Institute for Plasma PhysicsUNSPECIFIED
Hübers, H.-W.UNSPECIFIEDUNSPECIFIED
Date:2009
Journal or Publication Title:Applied Physics Letters
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:95
DOI :10.1063/1.3266837
Page Range:pp. 201110-1
Publisher:American Institute of Physics (AIP)
Status:Published
Keywords:bismuth, doping, excited states, ground states, Raman spectra, semiconductor lasers, silicon, stimulated emission, stimulated Raman scattering, terahertz wave spectra
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:06 Jan 2010 08:42
Last Modified:08 Mar 2018 18:52

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