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Advanced THz laser performance of shallow donors in axially stressed silicon crystal

Shastin, V. N. and Zhukavin, R. Kh. and Kovalevsky, K. A. and Tsyplenkov, V. V. and Pavlov, S. G. and Hübers, H.-W. (2009) Advanced THz laser performance of shallow donors in axially stressed silicon crystal. Journal of Physics: Conference Series, 193, 012086-1. Institute of Physics (IOP) Publishing. DOI: 10.1088/1742-6596/193/1/012086

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Abstract

Terahertz stimulated emission (4â��6 THz) from optically excited group-V donors (phosphor P, antimony Sb, arsenic As, bismuth Bi) in silicon crystal under compressive force has been studied. Measurements evidence that compressive force of 1â��1.5 kbar for P, Sb and of 2â��3 kbar for As, Bi applied along {100} crystallographic orientations results in the enhancement of the laser gain and enlarges the emission efficiency. At that laser threshold intensity can be decreased by two orders of magnitude. For As and Bi donors it is accompanied by the laser line switching while the 2p0 state turns out to be the upper laser state instead of the 2p�± one. The effect of the uniaxial stress on donor lasing originates from conduction band valley shift which split donor states changing their eigen-values and eigen-functions. According to the calculations of phonon-assisted relaxation rates appropriate donor modification increases the lifetime and makes pump efficiency of the upper laser states better.

Item URL in elib:https://elib.dlr.de/62240/
Document Type:Article
Title:Advanced THz laser performance of shallow donors in axially stressed silicon crystal
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Shastin, V. N.Institute for Physics of Microstructures, Russian Academy of ScienceUNSPECIFIED
Zhukavin, R. Kh.Institute for Physics of Microstructures, Russian Academy of ScienceUNSPECIFIED
Kovalevsky, K. A.Institute for Physics of Microstructures, Russian Academy of ScienceUNSPECIFIED
Tsyplenkov, V. V.Institute for Physics of Microstructures, Russian Academy of ScienceUNSPECIFIED
Pavlov, S. G.UNSPECIFIEDUNSPECIFIED
Hübers, H.-W.UNSPECIFIEDUNSPECIFIED
Date:2009
Journal or Publication Title:Journal of Physics: Conference Series
Refereed publication:Yes
Open Access:Yes
Gold Open Access:Yes
In SCOPUS:Yes
In ISI Web of Science:No
Volume:193
DOI :10.1088/1742-6596/193/1/012086
Page Range:012086-1
Publisher:Institute of Physics (IOP) Publishing
Series Name:Conference Series
Status:Published
Keywords:silicon laser
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:06 Jan 2010 11:48
Last Modified:08 Mar 2018 18:44

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