Pavlov, S.G. and Hübers, H.-W. and Böttger, U. and Hovenier, J.N. and Abrosimov, N.V. and Riemann, H. and Zhukavin, R.Kh. and Shastin, V.N. and Redlich, B. and van der Meer, A.F.G. (2009) Stimulated terahertz emission due to electronic Raman scattering in silicon. In: Abstracts of the 16th Int. Conf. on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, p. 174. d'AVL DIFFUSION, Montpellier. 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, 24-28 Aug 2009, Montpellier, France.
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Abstract
Silicon-based semiconductors are intensively investigated over the past years as promising candidates for optoelectronic devices at terahertz (THz) frequencies [1]. Optically pumped intracenter silicon lasers, realized in the past decade in the THz range, are based on direct optical transitions between shallow levels of different shallow donors [2]. Recently, terahertz Raman laser emission has been demonstrated in silicon doped by antimony [3] and phosphorus [4]. We report on realization of terahertz lasers based on intracenter electronic Raman scattering in silicon doped by arsenic (Si:As, frequency range 4.8 – 5.1 THz and 5.9 – 6.5 THz) and silicon doped by bismuth (Si:Bi, 4.6 – 5.9 THz) under optical excitation by infrared frequency-tunable free electron laser at low lattice temperatures. The Stokes shift of the observed laser emission is equal to the Raman-active donor electronic transition between the ground 1s(A1) and the excited 1s(E) donor states. Raman terahertz gain of the lasers is similar to those observed for the donor-type terahertz silicon donor lasers.
Item URL in elib: | https://elib.dlr.de/59861/ | |||||||||||||||||||||||||||||||||
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Document Type: | Conference or Workshop Item (Lecture) | |||||||||||||||||||||||||||||||||
Title: | Stimulated terahertz emission due to electronic Raman scattering in silicon | |||||||||||||||||||||||||||||||||
Authors: |
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Date: | August 2009 | |||||||||||||||||||||||||||||||||
Journal or Publication Title: | Abstracts of the 16th Int. Conf. on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures | |||||||||||||||||||||||||||||||||
Refereed publication: | No | |||||||||||||||||||||||||||||||||
Open Access: | Yes | |||||||||||||||||||||||||||||||||
Gold Open Access: | No | |||||||||||||||||||||||||||||||||
In SCOPUS: | No | |||||||||||||||||||||||||||||||||
In ISI Web of Science: | No | |||||||||||||||||||||||||||||||||
Page Range: | p. 174 | |||||||||||||||||||||||||||||||||
Publisher: | d'AVL DIFFUSION, Montpellier | |||||||||||||||||||||||||||||||||
Status: | Published | |||||||||||||||||||||||||||||||||
Keywords: | terahertz silicon lasers, stimulated Raman scattering | |||||||||||||||||||||||||||||||||
Event Title: | 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures | |||||||||||||||||||||||||||||||||
Event Location: | Montpellier, France | |||||||||||||||||||||||||||||||||
Event Type: | international Conference | |||||||||||||||||||||||||||||||||
Event Dates: | 24-28 Aug 2009 | |||||||||||||||||||||||||||||||||
Organizer: | University of Montpellier | |||||||||||||||||||||||||||||||||
HGF - Research field: | Aeronautics, Space and Transport (old) | |||||||||||||||||||||||||||||||||
HGF - Program: | Space (old) | |||||||||||||||||||||||||||||||||
HGF - Program Themes: | W EW - Erforschung des Weltraums | |||||||||||||||||||||||||||||||||
DLR - Research area: | Space | |||||||||||||||||||||||||||||||||
DLR - Program: | W EW - Erforschung des Weltraums | |||||||||||||||||||||||||||||||||
DLR - Research theme (Project): | W - Projekt SOFIA (old) | |||||||||||||||||||||||||||||||||
Location: | Berlin-Adlershof | |||||||||||||||||||||||||||||||||
Institutes and Institutions: | Institute of Planetary Research > Terahertz and Infrared Sensors | |||||||||||||||||||||||||||||||||
Deposited By: | Pavlov, Dr. Sergey | |||||||||||||||||||||||||||||||||
Deposited On: | 06 Jan 2010 21:00 | |||||||||||||||||||||||||||||||||
Last Modified: | 31 Jul 2019 19:25 |
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