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Stimulated terahertz emission due to electronic Raman scattering in silicon

Pavlov, S.G. and Hübers, H.-W. and Böttger, U. and Hovenier, J.N. and Abrosimov, N.V. and Riemann, H. and Zhukavin, R.Kh. and Shastin, V.N. and Redlich, B. and van der Meer, A.F.G. (2009) Stimulated terahertz emission due to electronic Raman scattering in silicon. In: Abstracts of the 16th Int. Conf. on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, p. 174. d'AVL DIFFUSION, Montpellier. 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, 24-28 Aug 2009, Montpellier, France.

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Abstract

Silicon-based semiconductors are intensively investigated over the past years as promising candidates for optoelectronic devices at terahertz (THz) frequencies [1]. Optically pumped intracenter silicon lasers, realized in the past decade in the THz range, are based on direct optical transitions between shallow levels of different shallow donors [2]. Recently, terahertz Raman laser emission has been demonstrated in silicon doped by antimony [3] and phosphorus [4]. We report on realization of terahertz lasers based on intracenter electronic Raman scattering in silicon doped by arsenic (Si:As, frequency range 4.8 – 5.1 THz and 5.9 – 6.5 THz) and silicon doped by bismuth (Si:Bi, 4.6 – 5.9 THz) under optical excitation by infrared frequency-tunable free electron laser at low lattice temperatures. The Stokes shift of the observed laser emission is equal to the Raman-active donor electronic transition between the ground 1s(A1) and the excited 1s(E) donor states. Raman terahertz gain of the lasers is similar to those observed for the donor-type terahertz silicon donor lasers.

Item URL in elib:https://elib.dlr.de/59861/
Document Type:Conference or Workshop Item (Lecture)
Title:Stimulated terahertz emission due to electronic Raman scattering in silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, S.G.UNSPECIFIEDUNSPECIFIED
Hübers, H.-W.UNSPECIFIEDUNSPECIFIED
Böttger, U.UNSPECIFIEDUNSPECIFIED
Hovenier, J.N.Kavli Institute of Nanoscience Delft, DelftUNSPECIFIED
Abrosimov, N.V.Leibniz Institute of Crystal Growth, BerlinUNSPECIFIED
Riemann, H.Leibniz Institute of Crystal Growth, BerlinUNSPECIFIED
Zhukavin, R.Kh.Institute for Physics of Microstructures, Russian Academy of SciencesUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of SciencesUNSPECIFIED
Redlich, B.FOM-Institute for Plasma Physics, NieuwegeinUNSPECIFIED
van der Meer, A.F.G.FOM-Institute for Plasma Physics, NieuwegeinUNSPECIFIED
Date:August 2009
Journal or Publication Title:Abstracts of the 16th Int. Conf. on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
Refereed publication:No
Open Access:Yes
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Page Range:p. 174
Publisher:d'AVL DIFFUSION, Montpellier
Status:Published
Keywords:terahertz silicon lasers, stimulated Raman scattering
Event Title:16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
Event Location:Montpellier, France
Event Type:international Conference
Event Dates:24-28 Aug 2009
Organizer:University of Montpellier
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:06 Jan 2010 21:00
Last Modified:31 Jul 2019 19:25

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