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Raman lasers due to scattering on donor electronic resonances in silicon

Pavlov, S.G. and Hübers, H.-W. and Böttger, U. and Abrosimov, N.V. and Riemann, H. and Shastin, V.N. and Redlich, B. and van der Meer, A.F.G. (2009) Raman lasers due to scattering on donor electronic resonances in silicon. In: Book of Abstracts of the 25th Int. Conf. on Defects in Semiconductors, p. 102. Ioffe Institute. 25th International Conference on Defects in Semiconductors, 20-24 Jul 2009, St Petersburg, Russia. ISBN 978-5-93634-048-2

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Abstract

New principals to generate stimulated emission in terahertz frequency range from silicon doped by shallow donor centers have been demonstrated. Lasing in the frequency bands cov-ering the range of 5.0 –6.7 THz, has been achieved from silicon crystals doped by all group-V donors under optical pumping by radiation of frequency-tunable mid-infrared free electron laser at cryogenic temperatures. Analysis of the data shows that the emission corresponds to Stokes-shifted Raman-type lasing. The Stokes shift is determined by the 1s(E)-1s(A1) donor electronic resonance.

Item URL in elib:https://elib.dlr.de/59859/
Document Type:Conference or Workshop Item (Speech)
Title:Raman lasers due to scattering on donor electronic resonances in silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, S.G.UNSPECIFIEDUNSPECIFIED
Hübers, H.-W.UNSPECIFIEDUNSPECIFIED
Böttger, U.UNSPECIFIEDUNSPECIFIED
Abrosimov, N.V.Leibniz Institute for Crystal Growth, Berlin, GermanyUNSPECIFIED
Riemann, H.Leibniz Institute for Crystal Growth, Berlin, GermanyUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Redlich, B.FOM Institute for Plasma Physics, Nieuwegein, The NetherlandsUNSPECIFIED
van der Meer, A.F.G.FOM Institute for Plasma Physics, Nieuwegein, The NetherlandsUNSPECIFIED
Date:July 2009
Journal or Publication Title:Book of Abstracts of the 25th Int. Conf. on Defects in Semiconductors
Refereed publication:No
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Page Range:p. 102
Publisher:Ioffe Institute
ISBN:978-5-93634-048-2
Status:Published
Keywords:electronic Raman scattering, silicon laser
Event Title:25th International Conference on Defects in Semiconductors
Event Location:St Petersburg, Russia
Event Type:international Conference
Event Dates:20-24 Jul 2009
Organizer:Ioffe Institute, Russian Academy of Sciences
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:06 Jan 2010 21:06
Last Modified:21 Jan 2010 13:11

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