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Pavlov, S.G. and Hübers, H.-W. and Böttger, U. and Abrosimov, N.V. and Riemann, H. and Shastin, V.N. and Redlich, B. and van der Meer, A.F.G. (2009) Raman lasers due to scattering on donor electronic resonances in silicon. In: Book of Abstracts of the 25th Int. Conf. on Defects in Semiconductors, p. 102. Ioffe Institute. 25th International Conference on Defects in Semiconductors, 20-24 Jul 2009, St Petersburg, Russia. ISBN 978-5-93634-048-2
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Abstract
New principals to generate stimulated emission in terahertz frequency range from silicon doped by shallow donor centers have been demonstrated. Lasing in the frequency bands cov-ering the range of 5.0 –6.7 THz, has been achieved from silicon crystals doped by all group-V donors under optical pumping by radiation of frequency-tunable mid-infrared free electron laser at cryogenic temperatures. Analysis of the data shows that the emission corresponds to Stokes-shifted Raman-type lasing. The Stokes shift is determined by the 1s(E)-1s(A1) donor electronic resonance.
| Item URL in elib: | https://elib.dlr.de/59859/ | |||||||||||||||||||||||||||
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| Document Type: | Conference or Workshop Item (Speech) | |||||||||||||||||||||||||||
| Title: | Raman lasers due to scattering on donor electronic resonances in silicon | |||||||||||||||||||||||||||
| Authors: |
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| Date: | July 2009 | |||||||||||||||||||||||||||
| Journal or Publication Title: | Book of Abstracts of the 25th Int. Conf. on Defects in Semiconductors | |||||||||||||||||||||||||||
| Refereed publication: | No | |||||||||||||||||||||||||||
| Open Access: | No | |||||||||||||||||||||||||||
| Gold Open Access: | No | |||||||||||||||||||||||||||
| In SCOPUS: | No | |||||||||||||||||||||||||||
| In ISI Web of Science: | No | |||||||||||||||||||||||||||
| Page Range: | p. 102 | |||||||||||||||||||||||||||
| Publisher: | Ioffe Institute | |||||||||||||||||||||||||||
| ISBN: | 978-5-93634-048-2 | |||||||||||||||||||||||||||
| Status: | Published | |||||||||||||||||||||||||||
| Keywords: | electronic Raman scattering, silicon laser | |||||||||||||||||||||||||||
| Event Title: | 25th International Conference on Defects in Semiconductors | |||||||||||||||||||||||||||
| Event Location: | St Petersburg, Russia | |||||||||||||||||||||||||||
| Event Type: | international Conference | |||||||||||||||||||||||||||
| Event Dates: | 20-24 Jul 2009 | |||||||||||||||||||||||||||
| Organizer: | Ioffe Institute, Russian Academy of Sciences | |||||||||||||||||||||||||||
| HGF - Research field: | Aeronautics, Space and Transport (old) | |||||||||||||||||||||||||||
| HGF - Program: | Space (old) | |||||||||||||||||||||||||||
| HGF - Program Themes: | W EW - Erforschung des Weltraums | |||||||||||||||||||||||||||
| DLR - Research area: | Space | |||||||||||||||||||||||||||
| DLR - Program: | W EW - Erforschung des Weltraums | |||||||||||||||||||||||||||
| DLR - Research theme (Project): | W - Projekt SOFIA (old) | |||||||||||||||||||||||||||
| Location: | Berlin-Adlershof | |||||||||||||||||||||||||||
| Institutes and Institutions: | Institute of Planetary Research > Terahertz and Infrared Sensors | |||||||||||||||||||||||||||
| Deposited By: | Pavlov, Dr. Sergey | |||||||||||||||||||||||||||
| Deposited On: | 06 Jan 2010 21:06 | |||||||||||||||||||||||||||
| Last Modified: | 21 Jan 2010 13:11 |
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