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Stimulated terahertz emission due to electronic Raman scattering in silicon

Pavlov, S.G. and Böttger, U. and Hovenier, J.N. and Abrosimov, N.V. and Riemann, H. and Zhukavin, R.Kh. and Shastin, V.N. and Redlich, B. and van der Meer, A.F.G. and Hübers, H.-W. (2009) Stimulated terahertz emission due to electronic Raman scattering in silicon. Applied Physics Letters, 94, pp. 171112-1. American Institute of Physics (AIP). DOI: 10.1063/1.3119662

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Official URL: http://link.aip.org/link/?APPLAB/94/171112/1

Abstract

Stimulated Raman emission in the terahertz frequency range (4.8–5.1 THz and 5.9–6.5 THz) has been realized by optical excitation of arsenic donor centers in silicon at low temperatures. The Stokes shift of the observed laser emission is 5.42 THz which is equal to the Raman-active donor electronic transition between the ground 1s(A1) and the excited 1s(E) arsenic states. Optical thresholds of the Raman laser are similar to those observed for other silicon donor lasers. In addition intracenter donor lasing has been observed when pumping on the dipole-forbidden 1s(A1)-2s transition.

Item URL in elib:https://elib.dlr.de/59857/
Document Type:Article
Title:Stimulated terahertz emission due to electronic Raman scattering in silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, S.G.UNSPECIFIEDUNSPECIFIED
Böttger, U.UNSPECIFIEDUNSPECIFIED
Hovenier, J.N.Kavli Institute of Nanoscience Delft, Delft University of Technology, Delft, The NetherlandsUNSPECIFIED
Abrosimov, N.V.Leibniz Institute of Crystal Growth, Berlin, GermanyUNSPECIFIED
Riemann, H.Leibniz Institute of Crystal Growth, Berlin, GermanyUNSPECIFIED
Zhukavin, R.Kh.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Shastin, V.N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Redlich, B.FOM Institute for Plasma Physics, Nieuwegein, The NetherlandsUNSPECIFIED
van der Meer, A.F.G.FOM Institute for Plasma Physics, Nieuwegein, The NetherlandsUNSPECIFIED
Hübers, H.-W.UNSPECIFIEDUNSPECIFIED
Date:2009
Journal or Publication Title:Applied Physics Letters
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:94
DOI :10.1063/1.3119662
Page Range:pp. 171112-1
Publisher:American Institute of Physics (AIP)
Status:Published
Keywords:silicon Raman laser, terahertz laser
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:06 Jan 2010 21:10
Last Modified:08 Mar 2018 18:52

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