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Effects of annealing and doping on nanostructured bismuth telluride thick films

Li, Shanghua and Soliman, Hesham M. A. and Zhou, Jian and Toprak, Muhammet S. and Muhammed, Mamoun and Platzek, Dieter and Ziolkowski, Pawel and Müller, Eckhard (2008) Effects of annealing and doping on nanostructured bismuth telluride thick films. Chemistry of Materials, 20 (13), pp. 4403-4410. DOI: 10.1021/cm800696h

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Official URL: http://pubs.acs.org/doi/pdfplus/10.1021/cm800696h


Bismuth telluride is the state-of-the-art thermoelectric (TE) material for cooling applications with a figure of merit of ~1 at 300 K. There is a need for the development of TE materials based on the concept of thick films for miniaturized devices due to mechanical and manufacturing constraints for the thermoelement dimensions. We have reported earlier a method for the fabrication of high quality nanostructured bismuth telluride thick films with thickness from 100 to 350 μm based on electrochemical deposition techniques. In this paper, annealing is performed to further improve the TE performance of the nanostructured bismuth telluride thick films and n/p-type solid solutions are successfully fabricated by doping Se and Sb, respectively. The conditions for both annealing and doping for the thick films are investigated and the effects of annealing and doping on morphology, crystalline phase, grain size, Seebeck coefficient, homogeneity, electrical conductivity, and power factor of the bismuth telluride thick films have been studied.

Item URL in elib:https://elib.dlr.de/56654/
Document Type:Article
Title:Effects of annealing and doping on nanostructured bismuth telluride thick films
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Li, ShanghuaRoyal Institute of Technology (KTH)UNSPECIFIED
Soliman, Hesham M. A.Institute of Advanced Technology and New Materials, Mubarak City for Scientific Research and Technology ApplicationsUNSPECIFIED
Zhou, JianRoyal Institute of Technology (KTH)UNSPECIFIED
Toprak, Muhammet S.Royal Institute of Technology (KTH)UNSPECIFIED
Muhammed, MamounRoyal Institute of Technology (KTH)UNSPECIFIED
Date:11 June 2008
Journal or Publication Title:Chemistry of Materials
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In ISI Web of Science:No
DOI :10.1021/cm800696h
Page Range:pp. 4403-4410
American Chemical Society, UNSPECIFIED
Keywords:Annealing, Doping, Thermoelectric, Bismuth telluride, Electrodeposition, Thick film
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Aeronautics
HGF - Program Themes:Propulsion Systems (old)
DLR - Research area:Aeronautics
DLR - Program:L ER - Engine Research
DLR - Research theme (Project):L - Virtual Engine and Validation Methods (old)
Location: Köln-Porz
Institutes and Institutions:Institute of Materials Research > Structural and Functional Ceramics
Deposited By: Ziolkowski, Pawel
Deposited On:08 Dec 2008
Last Modified:27 Apr 2009 15:35

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