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Raman terahertz Si:P and Si:Sb lasers

Pavlov, Sergey and Hübers, Heinz-Wilhelm and Böttger, Ute and Hovenier, Niels and Redlich, Britta and van Buuren, Rene and Zhukavin, Roman and Shastin, Valery (2008) Raman terahertz Si:P and Si:Sb lasers. In: European Material Research Society (E-MRS) Spring Meeting 2008, Symposium : C „Frontiers in silicon-based photonics“. E-MRS Spring Meeting, [2008-05-26 - 2008-05-30], Strasbourg (France).

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Official URL: http://www.emrs-strasbourg.com/index.php?option=com_content&task=view&id=222

Abstract

In the past few years significant progress has been made towards silicon-based lasers mainly due to new approaches in the infrared wavelength range, such as silicon nanocrystals, A-centre mediated direct recombination, Si/SiO2 and Si/SiGe superlattices, porous silicon, erbium-doped silicon, silicon light-emitting diodes, as well as 1.67 µm Raman silicon laser. Recently achieved optically pumped silicon terahertz lasers involve light scattering at donor centre states coupled by resonant interaction with an intervalley transverse acoustic g-TA phonon in silicon. Raman-type Stokes stimulated emission has been obtained from silicon crystals doped by antimony and phosphorus donors at low temperatures when optically excited by radiation from a tunable infrared free electron laser. The photon energy of the terahertz laser emission is equal to the pump photon energy reduced by the energy spacing between a singlet and a doublet donor states in silicon. The lasers emit a few tenths of mWs in a few ps pulse in the frequency ranges of 4.6 - 5.8 THz (Si:Sb) and 6.0 - 6.4 THz (Si:P) and have a gain of ~10^-3 1/cm at a pump intensity of ~100 kW/cm2. Raman-type silicon lasers based on a light scattering on donor centres can be potentially expanded onto mid-infrared lasing, where they could have higher gain and operation temperatures.

Item URL in elib:https://elib.dlr.de/55917/
Document Type:Conference or Workshop Item (Speech)
Title:Raman terahertz Si:P and Si:Sb lasers
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, SergeyUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIEDUNSPECIFIED
Böttger, UteUNSPECIFIEDUNSPECIFIED
Hovenier, NielsKavli Institute of Nanoscience, Delft University of Technology, Delft, The NetherlandsUNSPECIFIED
Redlich, BrittaFOM-Institute for Plasma Physics, Nieuwegein, The NetherlandsUNSPECIFIED
van Buuren, ReneFOM-Institute for Plasma Physics, Nieuwegein, The NetherlandsUNSPECIFIED
Zhukavin, RomanInstitute for Physics of Microstructures, Russian Academy of Sciences, N.Novgorod, RussiaUNSPECIFIED
Shastin, ValeryInstitute for Physics of Microstructures, Russian Academy of Sciences, N.Novgorod, RussiaUNSPECIFIED
Date:May 2008
Journal or Publication Title:European Material Research Society (E-MRS) Spring Meeting 2008, Symposium : C „Frontiers in silicon-based photonics“
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Status:Published
Keywords:Raman silicon laser, THz laser
Event Title:E-MRS Spring Meeting
Event Location:Strasbourg (France)
Event Type:international Conference
Event Dates:[2008-05-26 - 2008-05-30]
Organizer:European Material Research Society
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:05 Jan 2009
Last Modified:27 Apr 2009 15:25

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