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Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon

Pavlov, Sergey and Hübers, Heinz-Wilhelm and Haas, Philipp and Hovenier, Niels and Klaassen, Tjeerd and Zhukavin, Roman and Shastin, Valery and Carder, Damian and Redlich, Britta (2008) Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon. Physical Review B, 78, 165201-1-165201-7. The American Physical Society. DOI: 10.1103/PhysRevB.78.165201

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Official URL: http://link.aps.org/abstract/PRB/v78/e165201

Abstract

Noncascade relaxation of photoexcited electrons on ionized donor centers has been observed in silicon doped by arsenic (Si:As) at low temperatures. Emission spectra of the Si:As terahertz intracenter laser give evidence of specific channels for the electron relaxation through low-lying donor states. The dominating relaxation channels strongly depend on the initial energy distribution of the nonequilibrium carriers. A relaxation step may exceed not only the energy gap to an adjacent lower-lying donor level but also the characteristic energy step as set by the energy and momentum conservation requirements for intravalley acoustic phonons.

Item URL in elib:https://elib.dlr.de/55914/
Document Type:Article
Title:Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, SergeyUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIEDUNSPECIFIED
Haas, PhilippUNSPECIFIEDUNSPECIFIED
Hovenier, NielsKavli Institute of Nanoscience, Delft University of Technology, Delft, The NetherlandsUNSPECIFIED
Klaassen, TjeerdKavli Institute of Nanoscience, Delft University of Technology, Delft, The NetherlandsUNSPECIFIED
Zhukavin, RomanInstitute for Physics of Microstructures, Russian Academy of Sciences, N.Novgorod, RussiaUNSPECIFIED
Shastin, ValeryInstitute for Physics of Microstructures, Russian Academy of Sciences, N.Novgorod, RussiaUNSPECIFIED
Carder, DamianFOM-Institute for Plasma Physics, Nieuwegein, The NetherlandsUNSPECIFIED
Redlich, BrittaFOM-Institute for Plasma Physics, Nieuwegein, The NetherlandsUNSPECIFIED
Date:6 October 2008
Journal or Publication Title:Physical Review B
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Volume:78
DOI :10.1103/PhysRevB.78.165201
Page Range:165201-1-165201-7
Publisher:The American Physical Society
Status:Published
Keywords:silicon, electronic capture
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:25 Nov 2008
Last Modified:12 Dec 2013 20:33

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