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Terahertz Raman laser based on silicon doped with phosphorus

Pavlov, Sergey and Hübers, Heinz-Wilhelm and Böttger, Ute and Zhukavin, Roman and Shastin, Valery and Hovenier, Niels and Redlich, Britta and Abrosimov, Nickolay and Riemann, Helge (2008) Terahertz Raman laser based on silicon doped with phosphorus. Applied Physics Letters, 92, 091111-1-091111-3. American Institute of Physics. DOI: 10.1063/1.2890717

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Official URL: http://link.aip.org/link/?APPLAB/92/091111/1

Abstract

Raman-type stimulated emission at frequencies between 5.0 and 5.2 THz as well as between 6.1 and 6.4 THz has been realized in silicon crystals doped by phosphorus donors. The Raman laser operates at around 5 K under optical excitation by a pulsed, frequency-tunable infrared free electron laser. The frequencies of the observed laser emission are close to the frequencies of the intracenter laser lines which originate from the 2p0 and 2p± phosphorus states. The Stokes shift of 3.16 THz is equal to the difference between the energies of the phosphorus ground state, 1s(A1), and the 1s(E) excited state.

Item URL in elib:https://elib.dlr.de/55913/
Document Type:Article
Title:Terahertz Raman laser based on silicon doped with phosphorus
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, SergeyUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIEDUNSPECIFIED
Böttger, UteUNSPECIFIEDUNSPECIFIED
Zhukavin, RomanInstitute for Physics of Microstructures, RAS, N.Novgorod, RussiaUNSPECIFIED
Shastin, ValeryInstitute for Physics of Microstructures, RAS, N.Novgorod, RussiaUNSPECIFIED
Hovenier, NielsKavli Institute of Nanoscience Delft, Delft University of Technology, Delft, The NetherlandsUNSPECIFIED
Redlich, BrittaFOM-Institute for Plasma Physics, Nieuwegein, The NetherlandsUNSPECIFIED
Abrosimov, NickolayLeibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIED
Riemann, HelgeLeibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIED
Date:4 March 2008
Journal or Publication Title:Applied Physics Letters
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Volume:92
DOI :10.1063/1.2890717
Page Range:091111-1-091111-3
Publisher:American Institute of Physics
Status:Published
Keywords:Raman laser, Silicon laser, THz laser
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:25 Nov 2008
Last Modified:12 Dec 2013 20:33

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