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Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors

Pavlov, Sergey and Hübers, Heinz-Wilhelm and Abrosimov, Nickolay and Riemann, Helge and Radamson, Henry and Bekin, Nickolay and Yablonsky, Artem and Zhukavin, Roman and Drozdov, Yury and Shastin, Valery (2008) Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors. Solid State Phenomena, 131-13, pp. 613-618. Trans Tech Publications Inc.. DOI: 10.4028/3-908451-43-4.613 ISBN 3-908451-43-4

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Official URL: http://www.scientific.net/3-908451-43-4/613/

Abstract

Terahertz-range photoluminescence from silicon-germanium crystals and superlattices doped by phosphor has been studied under optical excitation by radiation from a mid-infrared CO2 laser at low temperature. SiGe crystals with a Ge content between 0.9 and 6.5 %, doped by phosphor with a concentration optimal for silicon laser operation, do not exhibit terahertz gain. On the contrary, terahertz-range gain of ~ 2.3 - 3.2 1/cm has been observed for donor-related optical transitions in Si/SiGe strained superlattices at pump intensities above 100 kW/cm2.

Item URL in elib:https://elib.dlr.de/55911/
Document Type:Article
Title:Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, SergeyUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIEDUNSPECIFIED
Abrosimov, NickolayLeibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIED
Riemann, HelgeLeibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIED
Radamson, HenryRoyal Institute of Technology, Kista, SwedenUNSPECIFIED
Bekin, NickolayInstitute for Physics of Microstructures, RAS, N.Novgorod, RussiaUNSPECIFIED
Yablonsky, ArtemInstitute for Physics of Microstructures, RAS, N.Novgorod, RussiaUNSPECIFIED
Zhukavin, RomanInstitute for Physics of Microstructures, RAS, N.Novgorod, RussiaUNSPECIFIED
Drozdov, YuryInstitute for Physics of Microstructures, RAS, N.Novgorod, RussiaUNSPECIFIED
Shastin, ValeryInstitute for Physics of Microstructures, RAS, N.Novgorod, RussiaUNSPECIFIED
Date:2008
Journal or Publication Title:Solid State Phenomena
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Volume:131-13
DOI :10.4028/3-908451-43-4.613
Page Range:pp. 613-618
Publisher:Trans Tech Publications Inc.
ISBN:3-908451-43-4
Status:Published
Keywords:silicon-germanium, terahertz emission
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:25 Nov 2008
Last Modified:12 Dec 2013 20:33

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