Zhukavin, R.Kh. and Shastin, V.N. and Hübers, Heinz-Wilhelm and Pavlov, S.G. and Hovenier, J.N. and Klaassen, T.O. and van der Meer, A.F.G. (2007) Terahertz gain on shallow donor transitions in silicon. Journal of Applied Physics, 102, 093104-1-093104-5. American Institute of Physics. doi: 10.1063/1.2804756. ISSN 0021-8979.
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Abstract
Small signal gain measurements of optically excited terahertz silicon lasers are reported. Two types of lasers, Si:P and Si:Bi, were investigated. They were optically excited with radiation from a free electron laser or a CO<sub>2</sub> laser. The experiments were performed with an oscillator-amplifier scheme where one sample serves as a laser while the other one is an amplifier. In case of the free electron laser the pump frequency corresponds to intracenter excitation of the 2p0 or 2p± states of the P and Bi Coulomb centers, and the gain was determined for the 2p0→1sE, 2p0→1sT2 transitions in Si:P and the 2p±→1sE transition in Si:Bi. Pumping with a CO<sub>2</sub> laser leads to photoexcitation of the Coulomb centers. In this case the gain was determined for the 2p0→1sT2 of Si:P transition. The gain for intracenter pumping is in the range 5−10 cm−1 while for photoexcitation the gain is considerably less, namely 0.5 cm−1. The experimental results are analyzed and found to be in good agreement with theoretical calculations based on balance equations. © 2007 American Institute of Physics. DOI: 10.1063/1.2804756
Item URL in elib: | https://elib.dlr.de/51843/ | ||||||||||||||||||||||||
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Document Type: | Article | ||||||||||||||||||||||||
Title: | Terahertz gain on shallow donor transitions in silicon | ||||||||||||||||||||||||
Authors: |
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Date: | 2007 | ||||||||||||||||||||||||
Journal or Publication Title: | Journal of Applied Physics | ||||||||||||||||||||||||
Refereed publication: | Yes | ||||||||||||||||||||||||
Open Access: | No | ||||||||||||||||||||||||
Gold Open Access: | No | ||||||||||||||||||||||||
In SCOPUS: | No | ||||||||||||||||||||||||
In ISI Web of Science: | Yes | ||||||||||||||||||||||||
Volume: | 102 | ||||||||||||||||||||||||
DOI : | 10.1063/1.2804756 | ||||||||||||||||||||||||
Page Range: | 093104-1-093104-5 | ||||||||||||||||||||||||
Publisher: | American Institute of Physics | ||||||||||||||||||||||||
ISSN: | 0021-8979 | ||||||||||||||||||||||||
Status: | Published | ||||||||||||||||||||||||
Keywords: | THz, Laser, Silicon | ||||||||||||||||||||||||
HGF - Research field: | Aeronautics, Space and Transport (old) | ||||||||||||||||||||||||
HGF - Program: | Space (old) | ||||||||||||||||||||||||
HGF - Program Themes: | W EW - Erforschung des Weltraums | ||||||||||||||||||||||||
DLR - Research area: | Space | ||||||||||||||||||||||||
DLR - Program: | W EW - Erforschung des Weltraums | ||||||||||||||||||||||||
DLR - Research theme (Project): | W - Projekt SOFIA (old) | ||||||||||||||||||||||||
Location: | Berlin-Adlershof | ||||||||||||||||||||||||
Institutes and Institutions: | Institute of Planetary Research > Terahertz and Infrared Sensors | ||||||||||||||||||||||||
Deposited By: | Hübers, Dr. Heinz-Wilhelm | ||||||||||||||||||||||||
Deposited On: | 12 Nov 2007 | ||||||||||||||||||||||||
Last Modified: | 27 Apr 2009 14:28 |
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