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Intracenter Raman silicon lasers

Pavlov, Sergey (2007) Intracenter Raman silicon lasers. Laser Physics, 17 (8), pp. 1037-1040. MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.. doi: 10.1134/S1054660X07080038.

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Official URL: http://www.springerlink.com/content/881t9q65783527v2/?p=eace4cbdb7fe45ceb27a8495c6c53974&pi=2


Raman-type Stokes stimulated emission in the far-infrared wavelength range (52–65 μm) has been realized in silicon crystals doped by group-V hydrogen-like donor centers at low temperatures under optical excitation by radiation from a pulsed frequency-tunable infrared free-electron laser. The light scattering appears as an entire intracenter process and occurs on the donor electronic transitions being resonant to the intervalley transverse acoustic g phonon. The outgoing and incoming electronic donor resonances amplify the efficiency of scattering, so that the Raman optical gain increases to the values observed for the infrared room temperature Raman silicon lasers.

Item URL in elib:https://elib.dlr.de/51044/
Document Type:Article
Title:Intracenter Raman silicon lasers
AuthorsInstitution or Email of AuthorsAuthor's ORCID iD
Date:16 August 2007
Journal or Publication Title:Laser Physics
Open Access:No
Gold Open Access:No
In ISI Web of Science:No
DOI :10.1134/S1054660X07080038
Page Range:pp. 1037-1040
Publisher:MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
Keywords:Raman silicon laser, electron-phonon interaction, far-infrared laser
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:28 Aug 2007
Last Modified:12 Dec 2013 20:27

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