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Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon

Zhukavin, Roman and Tsyplenkov, Veniamin and Kovalesky, Konstantin and Shastin, Valery and Pavlov, Sergey and Böttger, Ute and Hübers, Heinz-Wilhelm and Riemann, Helge and Abrosimov, Nikolay and Nötzel, Natalia (2007) Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon. Applied Physics Letters, 90, 051101-1-051101-3. American Institute of Physics. DOI: 10.1063/1.2431568

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Abstract

The effect of uniaxial stress on terahertz stimulated emission from phosphor and antimony donors in silicon excited by CO2 laser radiation was studied. The laser action originates from 2p<sub>0</sub>->1s(T<sub>2</sub>) intracenter transitions. A compressive force applied to the silicon crystal decreases the laser threshold by one order of magnitude. The output power depends nonmonotonically on the stress, while the emission frequency does not change. The results are explained by changes of the donor electronic structure, which do not affect the energy gap between the laser states, and a resonant interaction with acoustic f-TA and g-TA phonons that disappears with increasing stress. ©2007 American Institute of Physics

Item URL in elib:https://elib.dlr.de/48921/
Document Type:Article
Title:Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Zhukavin, RomanInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Tsyplenkov, VeniaminInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Kovalesky, KonstantinInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Shastin, ValeryInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Pavlov, SergeyUNSPECIFIEDUNSPECIFIED
Böttger, UteUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIEDUNSPECIFIED
Riemann, HelgeInstitute of Crystal Growth, 12489 Berlin, GermanyUNSPECIFIED
Abrosimov, NikolayInstitute of Crystal Growth, 12489 Berlin, GermanyUNSPECIFIED
Nötzel, NataliaInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Date:29 January 2007
Journal or Publication Title:Applied Physics Letters
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Volume:90
DOI :10.1063/1.2431568
Page Range:051101-1-051101-3
Publisher:American Institute of Physics
Status:Published
Keywords:antimony; silicon; elemental semiconductors; stress effects; phosphorus; stimulated emission; energy gap; phonon-phonon interactions; impurity states; submillimetre wave spectra
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:09 Jul 2007
Last Modified:12 Dec 2013 20:25

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