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Low-threshold terahertz Si:As laser

Pavlov, Sergey and Böttger, Ute and Hübers, Heinz-Wilhelm and Zhukavin, Roman and Kovalevsky, Konstantin and Tsyplenkov, Veniamin and Shastin, Valery and Abrosimov, Nikolay and Riemann, Helge (2007) Low-threshold terahertz Si:As laser. Applied Physics Letters, 90, 141149-1-141149-3. American Institute of Physics. DOI: 10.1063/1.2720271

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Official URL: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000090000014141109000001&idtype=cvips&gifs=yes

Abstract

The optical threshold of terahertz intracenter arsenic-doped silicon lasers has been reduced by two orders of magnitude by applying a compressive force to the laser crystal. The Si:As lasers were optically excited with radiation from a CO<sub>2</sub> laser operating at a wavelength of 10.59 µm. The lowest threshold intensity of 8 kW/cm<sup>2</sup> was realized at about 3×10<sup>8</sup> Pa stress applied along the [001] crystal axis. The uniaxial stress breaks the resonant interaction of electrons bound to donors with intervalley f phonons. This changes the upper laser state from 2p<sub>±</sub> to 2p<sub>0</sub>, lowers the laser threshold, and increases the output power. ©2007 American Institute of Physics

Item URL in elib:https://elib.dlr.de/48912/
Document Type:Article
Title:Low-threshold terahertz Si:As laser
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, SergeyUNSPECIFIEDUNSPECIFIED
Böttger, UteUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIEDUNSPECIFIED
Zhukavin, RomanInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Kovalevsky, KonstantinInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Tsyplenkov, VeniaminInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Shastin, ValeryInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Abrosimov, NikolayInstitute of Crystal Growth, 12489 Berlin, GermanyUNSPECIFIED
Riemann, HelgeInstitute of Crystal Growth, 12489 Berlin, GermanyUNSPECIFIED
Date:2 April 2007
Journal or Publication Title:Applied Physics Letters
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Volume:90
DOI :10.1063/1.2720271
Page Range:141149-1-141149-3
Publisher:American Institute of Physics
Status:Published
Keywords:arsenic; silicon; elemental semiconductors; semiconductor lasers; submillimetre wave lasers; optical pumping; phonons
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:10 Jul 2007
Last Modified:12 Dec 2013 20:25

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