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Stress-controlled phonon-impurity resonant interactions in terahertz silicon lasers

Pavlov, Sergey and Hübers, Heinz-Wilhelm and Riemann, Helge and Bekin, Nikolay and Zhukavin, Roman and Shastin, Valery (2006) Stress-controlled phonon-impurity resonant interactions in terahertz silicon lasers. In: 12th International Conference on High Pressure Semiconductor Physics, Mo-P1-17. 12th International Conference on High Pressure Semiconductor Physics (HPSP-12), 2006-07-31 - 2006-08-04, Barcelona (Spain).

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Abstract

Silicon terahertz lasers operate at frequencies between 1 THz and 7 THz under conditions of optical mid-infrared or far-infrared pumping and low lattice temperatures (‹30 K). The intracenter laser mechanism is based on optical transitions between excited states of group-V donors P, Sb, As and Bi, while Stokes stimulated light scattering is responsible for lasing in Si:Sb. In both cases population inversion is realized due to different rates of the phonon-assisted intracenter relaxation of captured electrons. The donor states, resonantly coupled by the interaction with intervalley phonons in the Si lattice, exhibit the shortest lifetimes that determines the specific laser schemes in n-Si. External stress applied to a Si crystal can release the resonant phonon-impurity coupling. By this it changes the laser operation transition and its efficiency.

Item URL in elib:https://elib.dlr.de/44591/
Document Type:Conference or Workshop Item (Poster)
Title:Stress-controlled phonon-impurity resonant interactions in terahertz silicon lasers
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, SergeyUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIEDUNSPECIFIED
Riemann, HelgeInstitute of Crystal Growth, 12489 Berlin, GermanyUNSPECIFIED
Bekin, NikolayInstitute for Physics of Microstructures, Russian Academy of Sciences, N. Novgorod, RussiaUNSPECIFIED
Zhukavin, RomanInstitute for Physics of Microstructures, Russian Academy of Sciences, N. Novgorod, RussiaUNSPECIFIED
Shastin, ValeryInstitute for Physics of Microstructures, Russian Academy of Sciences, N. Novgorod, RussiaUNSPECIFIED
Date:August 2006
Journal or Publication Title:12th International Conference on High Pressure Semiconductor Physics
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Page Range:Mo-P1-17
Editors:
EditorsEmail
University of Barcelona, UNSPECIFIED
Status:Published
Keywords:Impurity-phonon interaction, silicon laser
Event Title:12th International Conference on High Pressure Semiconductor Physics (HPSP-12)
Event Location:Barcelona (Spain)
Event Type:international Conference
Event Dates:2006-07-31 - 2006-08-04
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:10 Oct 2006
Last Modified:12 Dec 2013 20:20

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