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Silicon Stokes terahertz laser

Pavlov, Sergey and Hübers, Heinz-Wilhelm and Hovenier, Jacob Niels and Klaassen, Tjeerd Onno and Carder, Damian A. and Phillips, P. Jonathan and Redlich, Britta and Riemann, Helge and Zhukavin, Roman and Shastin, Valery (2007) Silicon Stokes terahertz laser. In: 28th International Conference on the Physics of Semiconductors (893), pp. 1445-1446. 28th International Conference on the Physics of Semiconductors - ICPS 2006, 2006-07-24 - 2006-07-28, Vienna (Austria). ISBN 978-0-7354-0397-0

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Official URL: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APCPCS000893000001001445000001&idtype=cvips&gifs=Yes

Abstract

A Raman-type silicon laser at terahertz frequencies has been realized. Stokes-shifted stimulated emission has been observed from silicon crystals doped by antimony donors when optically excited by an infrared free electron laser. The Raman lasing was obtained due to resonant scattering on electronic states of a donor atom. ©2007 American Institute of Physics

Item URL in elib:https://elib.dlr.de/44590/
Document Type:Conference or Workshop Item (Poster)
Title:Silicon Stokes terahertz laser
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, SergeyUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIEDUNSPECIFIED
Hovenier, Jacob NielsKavli Institute of Nanoscience Delft, Delft University of Technology, Delft, The NetherlandsUNSPECIFIED
Klaassen, Tjeerd OnnoKavli Institute of Nanoscience Delft, Delft University of Technology, Delft, The NetherlandsUNSPECIFIED
Carder, Damian A.FOM-Institute for Plasma Physics, Nieuwegein, The NetherlandsUNSPECIFIED
Phillips, P. JonathanFOM-Institute for Plasma Physics, Nieuwegein, The NetherlandsUNSPECIFIED
Redlich, BrittaFOM-Institute for Plasma Physics, Nieuwegein, The NetherlandsUNSPECIFIED
Riemann, HelgeInstitute of Crystal Growth, 12489 Berlin, GermanyUNSPECIFIED
Zhukavin, RomanInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Shastin, ValeryInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaUNSPECIFIED
Date:10 April 2007
Journal or Publication Title:28th International Conference on the Physics of Semiconductors
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Page Range:pp. 1445-1446
Series Name:AIP Conference Proceedings
ISBN:978-0-7354-0397-0
Status:Published
Keywords:semiconductor lasers; silicon; Raman spectra; stimulated emission; free electron lasers
Event Title:28th International Conference on the Physics of Semiconductors - ICPS 2006
Event Location:Vienna (Austria)
Event Type:international Conference
Event Dates:2006-07-24 - 2006-07-28
Organizer:Austrian Research Centers, Vienna University of Technology, Gesellschaft für Mikro- und Nanoelektronik, Austria
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:10 Jul 2007
Last Modified:12 Dec 2013 20:20

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