The Influence of the Surface Accumulation Layer on Transport and Recombination Properties in n-Hg1-xCdxTe

Mahr von Staszewski, G. and Lex, C. and Nimtz, G. and Schilz, J. and Wollrab, R. (1990) The Influence of the Surface Accumulation Layer on Transport and Recombination Properties in n-Hg1-xCdxTe. Chinese Journal of Infrared & Millimeter Waves Page, Vol. 9 (5), pp. 419-428.

Full text not available from this repository.

Item URL in elib:

https://elib.dlr.de/42494/

Document Type:

Article

Additional Information:

LIDO-Berichtsjahr=1991,

Title:

The Influence of the Surface Accumulation Layer on Transport and Recombination Properties in n-Hg1-xCdxTe

Authors:

Authors	Institution or Email of Authors	Author's ORCID iD	ORCID Put Code
Mahr von Staszewski, G.	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Lex, C.	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Nimtz, G.	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Schilz, J.	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Wollrab, R.	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED

Date:

1990

Journal or Publication Title:

Chinese Journal of Infrared & Millimeter Waves Page

Refereed publication:

Yes

Open Access:

Gold Open Access:

In SCOPUS:

In ISI Web of Science:

Yes

Volume:

Vol. 9

Page Range:

pp. 419-428

Status:

Published

HGF - Research field:

Aeronautics, Space and Transport (old)

HGF - Program:

other

HGF - Program Themes:

other

DLR - Research area:

Space

DLR - Program:

no assignment

DLR - Research theme (Project):

UNSPECIFIED

Location:

Köln-Porz

Institutes and Institutions:

Institute of Materials Research

Deposited By:

DLR-Beauftragter, elib

Deposited On:

02 Apr 2006

Last Modified:

27 Apr 2009 12:18

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