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The Influence of the Surface Accumulation Layer on Transport and Recombination Properties in n-Hg1-xCdxTe

Mahr von Staszewski, G. and Lex, C. and Nimtz, G. and Schilz, J. and Wollrab, R. (1990) The Influence of the Surface Accumulation Layer on Transport and Recombination Properties in n-Hg1-xCdxTe. Chinese Journal of Infrared & Millimeter Waves Page, Vol. 9 (5), pp. 419-428.

Full text not available from this repository.


Item URL in elib:https://elib.dlr.de/42494/
Document Type:Article
Additional Information: LIDO-Berichtsjahr=1991,
Title:The Influence of the Surface Accumulation Layer on Transport and Recombination Properties in n-Hg1-xCdxTe
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Mahr von Staszewski, G.UNSPECIFIEDUNSPECIFIED
Lex, C.UNSPECIFIEDUNSPECIFIED
Nimtz, G.UNSPECIFIEDUNSPECIFIED
Schilz, J.UNSPECIFIEDUNSPECIFIED
Wollrab, R.UNSPECIFIEDUNSPECIFIED
Date:1990
Journal or Publication Title:Chinese Journal of Infrared & Millimeter Waves Page
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:Yes
Volume:Vol. 9
Page Range:pp. 419-428
Status:Published
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:other
HGF - Program Themes:other
DLR - Research area:Space
DLR - Program:no assignment
DLR - Research theme (Project):UNSPECIFIED
Location: Köln-Porz
Institutes and Institutions:Institute of Materials Research
Deposited By: DLR-Beauftragter, elib
Deposited On:02 Apr 2006
Last Modified:27 Apr 2009 12:18

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