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Double acceptor doped Ge: A new medium for inter-valence-band lasers

Bründermann, E. and Linhart, A.M. and Reichertz, L. and Röser, H.P. and Dubon, O.D. and Hansen, W.L. and Sirmain, G. and Haller, E.E. (1996) Double acceptor doped Ge: A new medium for inter-valence-band lasers. Applied Physics Letters, 68, pp. 3075-3077.

Full text not available from this repository.


Item URL in elib:https://elib.dlr.de/35621/
Document Type:Article
Additional Information: LIDO-Berichtsjahr=1996,
Title:Double acceptor doped Ge: A new medium for inter-valence-band lasers
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Bründermann, E.UNSPECIFIEDUNSPECIFIED
Linhart, A.M.UNSPECIFIEDUNSPECIFIED
Reichertz, L.UNSPECIFIEDUNSPECIFIED
Röser, H.P.UNSPECIFIEDUNSPECIFIED
Dubon, O.D.Lawrence Berkeley National Laboratory, University of California, Berkeley, CA, USAUNSPECIFIED
Hansen, W.L.wie DubonUNSPECIFIED
Sirmain, G.wie DubonUNSPECIFIED
Haller, E.E.wie DubonUNSPECIFIED
Date:1996
Journal or Publication Title:Applied Physics Letters
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:Yes
Volume:68
Page Range:pp. 3075-3077
Status:Published
Keywords:THz Germanium Laser, double acceptors, satellite, silicon
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EO - Erdbeobachtung
DLR - Research area:Space
DLR - Program:W EO - Erdbeobachtung
DLR - Research theme (Project):UNSPECIFIED
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Institut für Weltraumsensorik
Deposited By: DLR-Beauftragter, elib
Deposited On:02 Apr 2006
Last Modified:27 Apr 2009 09:59

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