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Conduction Mechanism and Noise in Submicron GaAs Schottky-Barrier Diodes.

Hübers, H.W. and Röser, H.P. (1994) Conduction Mechanism and Noise in Submicron GaAs Schottky-Barrier Diodes. In: Proc. of the 19th Internat. Conf. on Infrared and Millimeter Waves, Sendai, Japan, 17-21 Oct. 1994; JSAP Catalog No. AP941228 (1994), pp. 31-32.

Full text not available from this repository.


Item URL in elib:https://elib.dlr.de/35589/
Document Type:Conference or Workshop Item (Paper)
Additional Information: LIDO-Berichtsjahr=1995,
Title:Conduction Mechanism and Noise in Submicron GaAs Schottky-Barrier Diodes.
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Hübers, H.W.UNSPECIFIEDUNSPECIFIED
Röser, H.P.UNSPECIFIEDUNSPECIFIED
Date:1994
Journal or Publication Title:Proc. of the 19th Internat. Conf. on Infrared and Millimeter Waves, Sendai, Japan, 17-21 Oct. 1994; JSAP Catalog No. AP941228 (1994)
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Page Range:pp. 31-32
Status:Published
Keywords:Schottky-Barrier Dioden, Submicron Structure, Electron Conduction
HGF - Research field:UNSPECIFIED
HGF - Program:Space (old)
HGF - Program Themes:W EO - Erdbeobachtung
DLR - Research area:UNSPECIFIED
DLR - Program:W EO - Erdbeobachtung
DLR - Research theme (Project):UNSPECIFIED
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Institut für Weltraumsensorik
Deposited By: DLR-Beauftragter, elib
Deposited On:02 Apr 2006
Last Modified:27 Apr 2009 09:58

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