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Stimulated Terahertz Stokes Emission of Silicon Crystals Doped with Antimony Donors

Pavlov, Sergey and Hübers, Heinz-Wilhelm and Hovenier, Jacob Niels and Klaassen, Tjeerd Onno and Carder, Damian A. and Phillips, P. Jonathan and Redlich, Britta and Riemann, Helge and Zhukavin, Roman Kh. and Shastin, Valery N. (2006) Stimulated Terahertz Stokes Emission of Silicon Crystals Doped with Antimony Donors. Physical Review Letters, 96, 037404-1-037404-4. American Physical Society. DOI: 10.1103/PhysRevLett.96.037404

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Official URL: http://link.aps.org/abstract/PRL/v96/e037404

Abstract

Stimulated Stokes emission has been observed from silicon crystals doped by antimony donors when optically excited by radiation from a tunable infrared free electron laser. The photon energy of the emission is equal to the pump photon energy reduced by the energy of the intervalley transverse acoustic (TA) g-phonon in silicon (2.92 THz). The emission frequency covers the range of 4.6–5.8 THz. The laser process occurs due to a resonant coupling of the 1s(E) and 1s(A<sub>1</sub>) donor states (separation 2.97 THz) via the g-TA phonon, which conserves momentum and energy within a single impurity center.

Item URL in elib:https://elib.dlr.de/22403/
Document Type:Article
Title:Stimulated Terahertz Stokes Emission of Silicon Crystals Doped with Antimony Donors
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Pavlov, SergeyUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIEDUNSPECIFIED
Hovenier, Jacob NielsKavli Institute of Nanoscience Delft, Delft University of Technology, 2600 GA Delft, The NetherlandsUNSPECIFIED
Klaassen, Tjeerd OnnoKavli Institute of Nanoscience Delft, Delft University of Technology, 2600 GA Delft, The NetherlandsUNSPECIFIED
Carder, Damian A.FOM-Institute for Plasma Physics, 3439 MN Nieuwegein, The NetherlandsUNSPECIFIED
Phillips, P. JonathanFOM-Institute for Plasma Physics, 3439 MN Nieuwegein, The NetherlandsUNSPECIFIED
Redlich, BrittaFOM-Institute for Plasma Physics, 3439 MN Nieuwegein, The NetherlandsUNSPECIFIED
Riemann, HelgeInstitute of Crystal Growth, Max-Born-Strasse 2, 12489 Berlin, GermanyUNSPECIFIED
Zhukavin, Roman Kh.Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, RussiaUNSPECIFIED
Shastin, Valery N.Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, RussiaUNSPECIFIED
Date:27 January 2006
Journal or Publication Title:Physical Review Letters
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Volume:96
DOI :10.1103/PhysRevLett.96.037404
Page Range:037404-1-037404-4
Publisher:American Physical Society
Status:Published
Keywords:Stokes lasing, silicon, terahertz
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Pavlov, Dr. Sergey
Deposited On:16 Feb 2006
Last Modified:12 Dec 2013 20:10

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