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Growth and microstructural characterizations of GaN films grown by laser induced reactive epitaxy

Zhou, H. and Rupp, T. and Phillipp, F. and Henn, G. and Gross, M. and Rühm, A. (Max-Planck-Institut für Metallforschung, Heisenbergstr. 1, 70569 Stuttgart, and Schröder, H. (2003) Growth and microstructural characterizations of GaN films grown by laser induced reactive epitaxy. Journal of Applied Physics, 93 (4), pp. 1933-1940.

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Abstract

Hexagonal GaN thin films have been grown by laser induced reactive epitaxy (LIRE) and characterized by various techniques. The films were deposited on sapphire (0001) and SiC (0001) without and with a buffer layer. Dislocations with predominant edge type and inversion domains were observed in the films. Dislocation density measured by x-ray diffraction is in fair agreement with that measured by transmission electron microscopy. Studies on the polarity of films indicate that Ga polarity was obtained for the films grown on SiC, while the films grown directly on sapphire were of N polarity. The atomic structure with a displacement of c/8 across the inversion domain boundary was deduced from the fringe contrast analyses and high resolution transmission electron microscopy studies. For the films grown on sapphire, the Ga polarity was achieved by using an AlGaN prelayer coupled with the introduction of low-temperature GaN buffer layer, which led to a clear improvement of the film quality. The typical cathodoluminescence spectra of such GaN films are comparable to those reported in the literature. The present work provides insight into the crystal growth and microstructure of GaN films and indicates that LIRE is a promising method to grow high quality GaN films.

Item URL in elib:https://elib.dlr.de/2177/
Document Type:Article
Additional Information: LIDO-Berichtsjahr=2003,
Title:Growth and microstructural characterizations of GaN films grown by laser induced reactive epitaxy
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Zhou, H.National Institute for Materials Science, Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 JapanUNSPECIFIED
Rupp, T.UNSPECIFIEDUNSPECIFIED
Phillipp, F.Max-Planck-Institut für Metallforschung, Heisenbergstr. 1, 70569 StuttgartUNSPECIFIED
Henn, G.UNSPECIFIEDUNSPECIFIED
Gross, M.UNSPECIFIEDUNSPECIFIED
Rühm, A. (Max-Planck-Institut für Metallforschung, Heisenbergstr. 1, 70569 Stuttgart, UNSPECIFIEDUNSPECIFIED
Schröder, H.UNSPECIFIEDUNSPECIFIED
Date:2003
Journal or Publication Title:Journal of Applied Physics
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:Yes
Volume:93
Page Range:pp. 1933-1940
Status:Published
Keywords:GaN, laser, reactive epitaxy
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignment
DLR - Research theme (Project):L - Laser Research and Technology (old)
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: DLR-Beauftragter, elib
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:47

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