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Study of Relaxed Si0.7Ge0.3 Buffers Grown on Patterned Silicon Substrates by Raman Spectroscopy

Wöhl, G. and Kasper, E. and Klose, M. and Hackbarth, T. and Kibbel, H. (2001) Study of Relaxed Si0.7Ge0.3 Buffers Grown on Patterned Silicon Substrates by Raman Spectroscopy. GADEST 2001, Catania (Italy), September 30 - October 4, 2001.

Full text not available from this repository.


Item URL in elib:https://elib.dlr.de/2088/
Document Type:Conference or Workshop Item (Speech)
Additional Information: LIDO-Berichtsjahr=2001,
Title:Study of Relaxed Si0.7Ge0.3 Buffers Grown on Patterned Silicon Substrates by Raman Spectroscopy
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Wöhl, G.UNSPECIFIEDUNSPECIFIED
Kasper, E.UNSPECIFIEDUNSPECIFIED
Klose, M.UNSPECIFIEDUNSPECIFIED
Hackbarth, T.UNSPECIFIEDUNSPECIFIED
Kibbel, H.UNSPECIFIEDUNSPECIFIED
Date:2001
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Status:Published
Event Title:GADEST 2001, Catania (Italy), September 30 - October 4, 2001
Organizer:CNR-IMETEM
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignment
DLR - Research theme (Project):L - Laser Research and Technology (old)
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: DLR-Beauftragter, elib
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:40

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