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IR-RTI oscillations during laser induced epitaxial GaN film growth and the role of free carrier concentration

Hüttner, B. and Gross, M. and Rupp, T. and Schröder, H. (2000) IR-RTI oscillations during laser induced epitaxial GaN film growth and the role of free carrier concentration. Applied Surface Science, 154-155, pp. 263-268.

Full text not available from this repository.


Item URL in elib:https://elib.dlr.de/2084/
Document Type:Article
Additional Information: LIDO-Berichtsjahr=2001,
Title:IR-RTI oscillations during laser induced epitaxial GaN film growth and the role of free carrier concentration
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Hüttner, B.UNSPECIFIEDUNSPECIFIED
Gross, M.UNSPECIFIEDUNSPECIFIED
Rupp, T.UNSPECIFIEDUNSPECIFIED
Schröder, H.UNSPECIFIEDUNSPECIFIED
Date:2000
Journal or Publication Title:Applied Surface Science
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:Yes
Volume:154-155
Page Range:pp. 263-268
Status:Published
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignment
DLR - Research theme (Project):L - Laser Research and Technology (old)
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: DLR-Beauftragter, elib
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:40

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