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Oscillator strengths, intracenter absorption and photoionization cross sections of optical transitions of shallow donors in silicon

Pavlov, Sergey and Abrosimov, N. V. (2024) Oscillator strengths, intracenter absorption and photoionization cross sections of optical transitions of shallow donors in silicon. Physical Review Materials, 8, 054601. American Physical Society. doi: 10.1103/PhysRevMaterials.8.054601. ISSN 2475-9953.

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Official URL: https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.8.054601

Abstract

Infrared photoionization and intracenter cross sections as well as oscillator strengths of intracenter transitions in silicon doped with single-electron, shallow donors are determined in research-grade crystals and compared with the corresponding values calculated by various theoretical models. The float-zone grown crystals were doped with substitutional group-V, interstitial group IA lithium and lithium-oxygen complex at concentrations of 1e12–1e17 atoms/cm3. The concentrations of electrically active impurity centers in the samples were determined from resistivity measurements. Experimentally integrated cross sections were obtained from low-temperature absorption spectra of impurities. For an isocoric substitutional donor, the oscillator strengths for intracenter transitions into the lowest odd-parity states were compared for two main crystal growth and doping methods: the float-zone and the Czochralski techniques. The applicability of the obtained calibration coefficients for various ranges of impurity concentrations is discussed. Recommendations are given for the optimal selection of optical transitions for quantifying the density of shallow donors in silicon along with experimental values for each shallow center. The oscillator strengths of transitions of shallow impurities were estimated for almost all observed donor transitions, including those into high excited, Rydberg-like atomic states, as well as for the intracenter transitions into several even-parity excited states.

Item URL in elib:https://elib.dlr.de/204246/
Document Type:Article
Title:Oscillator strengths, intracenter absorption and photoionization cross sections of optical transitions of shallow donors in silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Pavlov, SergeyUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Abrosimov, N. V.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIEDUNSPECIFIED
Date:2024
Journal or Publication Title:Physical Review Materials
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:8
DOI:10.1103/PhysRevMaterials.8.054601
Page Range:054601
Publisher:American Physical Society
ISSN:2475-9953
Status:Published
Keywords:silicon, oscillator strength, transition' cross section
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space System Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Space System Technology
DLR - Research theme (Project):R - Detectors for optical instruments
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Pavlov, Dr. Sergey
Deposited On:14 May 2024 08:51
Last Modified:14 May 2024 08:51

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