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Characterization of GaN epilayers grown on sapphire and SiC substrates

Wieser, N. and Klose, M. and Scholz, F. and Off, J. and Dutrieux, Y. (1998) Characterization of GaN epilayers grown on sapphire and SiC substrates. In: Silicon Carbide, III-Nitrides and Related Materials, Materials Science Forum Fols. 264-268 (1998, pp. 1355-1358. Trans Tech Publications, Schweiz. International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Schweden, September 1997.

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Item URL in elib:https://elib.dlr.de/2039/
Document Type:Conference or Workshop Item (Paper)
Additional Information: LIDO-Berichtsjahr=1999,
Title:Characterization of GaN epilayers grown on sapphire and SiC substrates
Authors:
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Wieser, N.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Klose, M.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Scholz, F.4.Physik.Institut, Universität StuttgartUNSPECIFIEDUNSPECIFIED
Off, J.4.Physik.Institut, Universität StuttgartUNSPECIFIEDUNSPECIFIED
Dutrieux, Y.4.Physik.Institut, Universität StuttgartUNSPECIFIEDUNSPECIFIED
Date:1998
Journal or Publication Title:Silicon Carbide, III-Nitrides and Related Materials
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Volume:Materials Science Forum Fols. 264-268 (1998
Page Range:pp. 1355-1358
Editors:
EditorsEmailEditor's ORCID iDORCID Put Code
Pensl, G.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Morkoc, H.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Monemar, B.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Janzen, E.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Publisher:Trans Tech Publications, Schweiz
Status:Published
Keywords:Raman scattering, strain, carrier concentration
Event Title:International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Schweden, September 1997
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignment
DLR - Research theme (Project):L - Laser Research and Technology (old)
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: DLR-Beauftragter, elib
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:36

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