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Effect of thermal strain strain and carrier concentration on the phonon frequencies of GaN

Wieser, N. and Klose, M. and Scholz, F. and Off, J. (1998) Effect of thermal strain strain and carrier concentration on the phonon frequencies of GaN. In: Silicon Carbide, III-Nitrides and Related Materials, Materials Science Forum Vols. 264-268 (1998), pp. 1351-1354. Trans Tech Pulications, Schweiz. International Conference on Silicon Carbide, III-Nitrides and Related materials, Stockholm, Schweden, September 1997.

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Item URL in elib:https://elib.dlr.de/2038/
Document Type:Conference or Workshop Item (Paper)
Additional Information: LIDO-Berichtsjahr=1999,
Title:Effect of thermal strain strain and carrier concentration on the phonon frequencies of GaN
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Wieser, N.UNSPECIFIEDUNSPECIFIED
Klose, M.UNSPECIFIEDUNSPECIFIED
Scholz, F.4.Physik.Institut, Universität StuttgartUNSPECIFIED
Off, J.4.Physik.Institut, Universität StuttgartUNSPECIFIED
Date:1998
Journal or Publication Title:Silicon Carbide, III-Nitrides and Related Materials
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:No
Volume:Materials Science Forum Vols. 264-268 (1998)
Page Range:pp. 1351-1354
Editors:
EditorsEmail
Pensl, G.UNSPECIFIED
Morkoc, H.UNSPECIFIED
Monemar, B.UNSPECIFIED
Janzen, E.UNSPECIFIED
Publisher:Trans Tech Pulications, Schweiz
Status:Published
Keywords:Raman scattering, Plasmon-Phonon Interactions, Strain.
Event Title:International Conference on Silicon Carbide, III-Nitrides and Related materials, Stockholm, Schweden, September 1997
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignment
DLR - Research theme (Project):L - Laser Research and Technology (old)
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: DLR-Beauftragter, elib
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:36

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