Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy

Wieser, N. and Ambacher, O. and Felsl, H.-P. and Görgens, L. and Stutzmann, M. (1999) Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy. Applied Physics Letters, 74, pp. 3981-3983.

Full text not available from this repository.

Item URL in elib:

https://elib.dlr.de/2036/

Document Type:

Article

Additional Information:

LIDO-Berichtsjahr=1999,

Title:

Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy

Authors:

Authors	Institution or Email of Authors	Author's ORCID iD	ORCID Put Code
Wieser, N.	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Ambacher, O.	Walter Schottky Institut, TU München	UNSPECIFIED	UNSPECIFIED
Felsl, H.-P.	Walter Schottky Institut, TU München	UNSPECIFIED	UNSPECIFIED
Görgens, L.	Walter Schottky Institut, TU München	UNSPECIFIED	UNSPECIFIED
Stutzmann, M.	Walter Schottky Institut, TU München	UNSPECIFIED	UNSPECIFIED

Date:

1999

Journal or Publication Title:

Applied Physics Letters

Refereed publication:

Yes

Open Access:

Gold Open Access:

In SCOPUS:

In ISI Web of Science:

Yes

Volume:

Page Range:

pp. 3981-3983

Status:

Published

HGF - Research field:

Energy

HGF - Program:

Aeronautics

HGF - Program Themes:

other

DLR - Research area:

Energy

DLR - Program:

L - no assignment

DLR - Research theme (Project):

L - Laser Research and Technology (old)

Location:

Stuttgart

Institutes and Institutions:

Institute of Technical Physics

Deposited By:

DLR-Beauftragter, elib

Deposited On:

16 Sep 2005

Last Modified:

06 Jan 2010 14:36

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