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Gross, M. and Henn, G. and Schröder, H. (1997) Properties of GaN thin films prepared by laser induced molecular beam epitaxy. In: III-V Nitride Materials and Processes, 97-34, pp. 236-243. Second Symposium on III-V Nitride materials and Processes, Paris 1997. ISBN 1-56677-187-0.
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Abstract
We achieve high quality epitaxial GaN film growth on sapphire (0001) and 6H-SiC (0001) substrates by laser induced molecular beam epitaxy (LIMBE). Pure metal targets were ablated with a picosecond Nd:YAG laser in a nitrogen atmospere of 5E-02mbar. The films were grown at substrate temperatures between 700 and 800°C. Composition, structure and optical properties of the nitride films were chara<cterized with EDX, TEM, XRD, x-ray rocking curve measurements, AFM, SEM and PL spectroscopy. The films are smooth, stoichiometric, (0001) oriented and consist purely of the wurtzite phase. They show a x-ray rocking curve FWHM of 9 arcmin and a strong excitonic emission with a FWHM of 6.4meV in the PL spectrum at 4.3 K. Recent results of DLTS investigations on our GaN films revealed a residual carrier concentration of <1.E+17cm^-3.
| Item URL in elib: | https://elib.dlr.de/2025/ | ||||||||||||||||
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| Document Type: | Conference or Workshop Item (Paper) | ||||||||||||||||
| Additional Information: | LIDO-Berichtsjahr=1999, | ||||||||||||||||
| Title: | Properties of GaN thin films prepared by laser induced molecular beam epitaxy | ||||||||||||||||
| Authors: |
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| Date: | 1997 | ||||||||||||||||
| Journal or Publication Title: | III-V Nitride Materials and Processes | ||||||||||||||||
| Open Access: | No | ||||||||||||||||
| Gold Open Access: | No | ||||||||||||||||
| In SCOPUS: | No | ||||||||||||||||
| In ISI Web of Science: | No | ||||||||||||||||
| Volume: | 97-34 | ||||||||||||||||
| Page Range: | pp. 236-243 | ||||||||||||||||
| Editors: |
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| ISBN: | 1-56677-187-0 | ||||||||||||||||
| Status: | Published | ||||||||||||||||
| Keywords: | Gallium nitride, laser induced molecular beam epitaxy | ||||||||||||||||
| Event Title: | Second Symposium on III-V Nitride materials and Processes, Paris 1997 | ||||||||||||||||
| Organizer: | The Electrochemical Society | ||||||||||||||||
| HGF - Research field: | Energy | ||||||||||||||||
| HGF - Program: | Aeronautics | ||||||||||||||||
| HGF - Program Themes: | other | ||||||||||||||||
| DLR - Research area: | Energy | ||||||||||||||||
| DLR - Program: | L - no assignment | ||||||||||||||||
| DLR - Research theme (Project): | L - Laser Research and Technology (old) | ||||||||||||||||
| Location: | Stuttgart | ||||||||||||||||
| Institutes and Institutions: | Institute of Technical Physics | ||||||||||||||||
| Deposited By: | DLR-Beauftragter, elib | ||||||||||||||||
| Deposited On: | 16 Sep 2005 | ||||||||||||||||
| Last Modified: | 06 Jan 2010 14:35 |
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