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Characteristics of undoped and magnesium doped GaN films grown by laser induced MBE

Gross, M. and Henn, G. and Ziegler, J. and Allenspacher, P. and Cychy, C. and Schröder, H. (1999) Characteristics of undoped and magnesium doped GaN films grown by laser induced MBE. Materials Science & Engineering B, B59, pp. 94-97.

Full text not available from this repository.

Abstract

Epitaxial GaN films were grown on sapphire (0001) and 6H-SiC (0001) by reactive laser ablation of a metallic Ga target under continuous nitrogen flow. As radiation source a Nd:YAG laser with 30 ps pulses and a pulse rate of 1-3 kHz was used. The undoped films revealed a Hall background carrier concentration of 6xE^-17cm^-3 and an excitonic near band edge emission of 3.47 eV at 4.3 K. Mg incorporation into the Ga films was achieved by modulation of the evaporation from two targets (Ga and Mg) by laser beam scanning. CL, SIMS and AES measurements confirmed the Mg-doping of the films.

Item URL in elib:https://elib.dlr.de/2022/
Document Type:Article
Additional Information: LIDO-Berichtsjahr=1999,
Title:Characteristics of undoped and magnesium doped GaN films grown by laser induced MBE
Authors:
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Gross, M.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Henn, G.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Ziegler, J.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Allenspacher, P.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Cychy, C.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Schröder, H.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Date:1999
Journal or Publication Title:Materials Science & Engineering B
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:Yes
Volume:B59
Page Range:pp. 94-97
Status:Published
Keywords:Laser induced molecular beam epitaxy, GaN, Mg doping.
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignment
DLR - Research theme (Project):L - Laser Research and Technology (old)
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: DLR-Beauftragter, elib
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:35

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