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Raman investigations of GaN films grown by pulsed laser deposition

Klose, M. and Dassow, R. and Gross, M. and Schröder, H. (1998) Raman investigations of GaN films grown by pulsed laser deposition. Journal of Crystal Growth, 189/190, pp. 666-671.

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Abstract

GaN expitaxial films grown by pulsed laser deposition have been investigated by Raman scattering measurements. Room temperature electron concentrations and mobilities of films grown on 6H-SiC were estimated by A1(LO) mode analyses according to the theory of plasmon-coupled modes yielding values of about n=5xE+16cm^-3 and my=550cm^2/V.s, respectively. The Raman microprobe has served to explore the homogeneity of the films with respect to distributions of the residual strain and carrier concentration.

Item URL in elib:https://elib.dlr.de/2021/
Document Type:Article
Additional Information: LIDO-Berichtsjahr=1999,
Title:Raman investigations of GaN films grown by pulsed laser deposition
Authors:
AuthorsInstitution or Email of AuthorsAuthors ORCID iD
Klose, M.UNSPECIFIEDUNSPECIFIED
Dassow, R.UNSPECIFIEDUNSPECIFIED
Gross, M.UNSPECIFIEDUNSPECIFIED
Schröder, H.UNSPECIFIEDUNSPECIFIED
Date:1998
Journal or Publication Title:Journal of Crystal Growth
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:No
In ISI Web of Science:Yes
Volume:189/190
Page Range:pp. 666-671
Status:Published
Keywords:Pulsed laser deposition, Raman scattering, electron concentration and mobilities.
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignment
DLR - Research theme (Project):L - Laser Research and Technology (old)
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: DLR-Beauftragter, elib
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:35

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