elib
DLR-Header
DLR-Logo -> http://www.dlr.de
DLR Portal Home | Imprint | Privacy Policy | Contact | Deutsch
Fontsize: [-] Text [+]

Impurity-induced enhancement of parity-forbidden optical intracenter transitions of shallow donors in silicon

Pavlov, Sergey and Abrosimov, N. V. (2023) Impurity-induced enhancement of parity-forbidden optical intracenter transitions of shallow donors in silicon. Materials Science in Semiconductor Processing, 172, p. 108076. Elsevier. doi: 10.1016/j.mssp.2023.108076. ISSN 1369-8001.

[img] PDF - Only accessible within DLR - Published version
4MB

Abstract

Different defects in silicon crystals cause lattice distortion that may violate selection rules for certain intracenter optical transitions of hydrogen-like donor centers. Perturbations due to large concentration of substitutional donors enhance all parity-forbidden atomic transitions, but cause large concentration broadening of the transition lines, prohibiting observation of transitions at close energies. Substitutional residual carbon atoms in silicon induce, in contrast, a weak-to-moderate broadening of donor absorption lines enabling the resolution of some parity-forbidden intracenter transitions in impurity absorption spectra at moderate donor densities. Binding energies of several series of s- and d-type states were obtained by resolving of intracenter transitions terminating in these states, by low-temperature infrared absorption spectroscopy in carbon-rich and/or heavily doped silicon crystals.

Item URL in elib:https://elib.dlr.de/201858/
Document Type:Article
Title:Impurity-induced enhancement of parity-forbidden optical intracenter transitions of shallow donors in silicon
Authors:
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Pavlov, SergeyUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Abrosimov, N. V.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIEDUNSPECIFIED
Date:24 December 2023
Journal or Publication Title:Materials Science in Semiconductor Processing
Refereed publication:Yes
Open Access:No
Gold Open Access:No
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:172
DOI:10.1016/j.mssp.2023.108076
Page Range:p. 108076
Publisher:Elsevier
ISSN:1369-8001
Status:Published
Keywords:silicon, defects, parity-forbidden transitions
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space System Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Space System Technology
DLR - Research theme (Project):R - Detectors for optical instruments
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Pavlov, Dr. Sergey
Deposited On:08 Jan 2024 11:06
Last Modified:29 Jan 2024 13:08

Repository Staff Only: item control page

Browse
Search
Help & Contact
Information
electronic library is running on EPrints 3.3.12
Website and database design: Copyright © German Aerospace Center (DLR). All rights reserved.