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Device  level assessment of Ni and Ni45Cu55 as potential electrodes in Mg2(Si,Sn)-based TEGs for waste heat recovery

Deshpande, Radhika und Camut, Julia und Müller, Eckhard und de Boor, Johannes (2023) Device  level assessment of Ni and Ni45Cu55 as potential electrodes in Mg2(Si,Sn)-based TEGs for waste heat recovery. ICT 2023, 2023-06-21 - 2023-06-25, Seattle.

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Kurzfassung

Mg2(Si,Sn)-based solid solutions are a promising class of materials for mid-to-high temperature waste heat recovery owing to their non-toxicity, low mass density, and low price. Previous work has shown that n-Mg2(Si,Sn) degrades due to Mg-loss and a corresponding reduction of charge carrier concentration, with the best performing Sn-rich compositions showing limited stability at temperatures ≥ 400 °C posing significant challenges in developing a fully Mg2(Si,Sn)-based TEG. In our study, we propose that n-Mg2Si could serve as a suitable n-type leg for constructing a stable Mg2X-TEG that operates at temperatures up to 450 °C. Testing different electrode materials we found that usage of Ni45Cu55 and Ni results in low electrical contact resistance (< 5 µΩ.cm2) and does not alter the thermoelectric properties of n-Mg2Si, in contrast to other electrodes (eg. Al, Cu, Ag). In a differential experiment we fabricated two 2x2 TE modules that used the same electrode-TE combination for the p-type legs but a different electrode (Ni or Ni45Cu55) for their n-type legs . Both TEGs were subjected to a temperature difference of up to 375K allowing for a direct comparison between Ni and Ni45Cu55 electrodes for n-Mg2Si at the device level concerning the changes under thermal load and cyclic thermal stability. Our results prove that Ni45Cu55 is a better working electrode for n-Mg2Si and provides a stable and robust design for silicide-based thermoelectric generators. We find the strongest difference between the two employed electrode at the device level, implying that testing at the device level provides more valuable insights than tests conducted on individual legs. We report a maximum power density of 0.79 W/cm2 at ∆T ~ 375K which is among the highest performance of Mg2X-TEG reported in literature. A constant property model was used to simulate the performance of the TEG device, and a good match was found between the measured data and theoretical expectations when using Ni45Cu55 as the electrode for n-Mg2Si. We find that the measured efficiency of the prototype is comparable to that of previously reported fully Mg2(Si,Sn)-based TEGs due to reduced internal losses.

elib-URL des Eintrags:https://elib.dlr.de/201748/
Dokumentart:Konferenzbeitrag (Vortrag)
Titel:Device  level assessment of Ni and Ni45Cu55 as potential electrodes in Mg2(Si,Sn)-based TEGs for waste heat recovery
Autoren:
AutorenInstitution oder E-Mail-AdresseAutoren-ORCID-iDORCID Put Code
Deshpande, Radhikaradhika.deshpande (at) dlr.dehttps://orcid.org/0000-0002-1965-3111NICHT SPEZIFIZIERT
Camut, JuliaJulia.Camut (at) dlr.dehttps://orcid.org/0000-0003-3398-0095NICHT SPEZIFIZIERT
Müller, EckhardInstitute of Materials Research, German Aerospace Center (DLR), Institute of Materials Research – Thermoelectric Materials and Systems, 51147 Köln Porz-Wahnheide, Linder Höhe, Germany and Justus Liebig University Giessen, Institute of Inorganic and AnalytNICHT SPEZIFIZIERTNICHT SPEZIFIZIERT
de Boor, JohannesJohannes.deBoor (at) dlr.dehttps://orcid.org/0000-0002-1868-3167NICHT SPEZIFIZIERT
Datum:2023
Referierte Publikation:Ja
Open Access:Nein
Gold Open Access:Nein
In SCOPUS:Nein
In ISI Web of Science:Nein
Status:veröffentlicht
Stichwörter:Device  level assessment of Ni and Ni45Cu55
Veranstaltungstitel:ICT 2023
Veranstaltungsort:Seattle
Veranstaltungsart:internationale Konferenz
Veranstaltungsbeginn:21 Juni 2023
Veranstaltungsende:25 Juni 2023
HGF - Forschungsbereich:Energie
HGF - Programm:Energiesystemdesign
HGF - Programmthema:Digitalisierung und Systemtechnologie
DLR - Schwerpunkt:Energie
DLR - Forschungsgebiet:E SY - Energiesystemtechnologie und -analyse
DLR - Teilgebiet (Projekt, Vorhaben):E - Energiesystemtechnologie
Standort: Köln-Porz
Institute & Einrichtungen:Institut für Werkstoff-Forschung > Thermoelektrische Materialien und Systeme
Hinterlegt von: Rossmeier, Matthias
Hinterlegt am:29 Jan 2024 08:06
Letzte Änderung:24 Apr 2024 21:02

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