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Higher-harmonic generation in boron-doped silicon from band carriers and bound-dopant photoionization

Meng, Fanqi and Walla, Frederik and Kovalev, Sergey and Deinert, Jan-Christoph and Ilyakov, Igor and Chen, Min and Ponomaryov, Sergey and Pavlov, Sergey and Hübers, Heinz-Wilhelm and Abrosimov, N. V. and Jungemann, Christoph and Roskos, Hartmut G. and Thomson, Mark D. (2023) Higher-harmonic generation in boron-doped silicon from band carriers and bound-dopant photoionization. Physical Review Research, 5, 043141. American Physical Society. doi: 10.1103/PhysRevResearch.5.043141. ISSN 2643-1564.

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Official URL: https://journals.aps.org/prresearch/abstract/10.1103/PhysRevResearch.5.043141

Abstract

We investigate ultrafast harmonic generation (HG) in Si:B, driven by intense pump pulses with fields reaching 100 kV/cm and a carrier frequency of 300 GHz, at 4 K and 300 K, both experimentally and theoretically. We report several findings concerning the nonlinear charge carrier dynamics in intense sub-THz fields: (i) Harmonics of order up to n = 9 are observed at room temperature, while at low temperature we can resolve harmonics reaching at least n = 11. The susceptibility per charge carrier at moderate field strength is as high as for charge carriers in graphene, considered to be one of the materials with the strongest sub-THz nonlinear response. (ii) For T = 300 K, where the charge carriers bound to acceptors are fully thermally ionized into the valence subbands, the susceptibility values decrease with increasing field strength. Simulations incorporating multi-valence-band Monte Carlo and finite-difference-time-domain (FDTD) propagation show that here, the HG process becomes increasingly dominated by energy-dependent scattering rates over the contribution from band nonparabolicity, due to the onset of optical-phonon emission, which ultimately leads to the saturation at high fields. (iii) At T = 4 K, where the majority of charges are bound to acceptors, we observe a drastic rise of the HG yields for internal pump fields of 30 kV/cm, as one reaches the threshold for tunnel ionization. We disentangle the HG nonlinear response into contributions associated with the initial photoionization and subsequent motion in the bands, and show that intracycle scattering seriously degrades any contribution to HG emission from coherent recollision of the holes with their parent ions.

Item URL in elib:https://elib.dlr.de/201218/
Document Type:Article
Title:Higher-harmonic generation in boron-doped silicon from band carriers and bound-dopant photoionization
Authors:
AuthorsInstitution or Email of AuthorsAuthor's ORCID iDORCID Put Code
Meng, FanqiPhysikalisches Institut, Goethe-Universität FrankfurtUNSPECIFIEDUNSPECIFIED
Walla, FrederikPhysikalisches Institut, Goethe-Universität FrankfurtUNSPECIFIEDUNSPECIFIED
Kovalev, SergeyHelmholtz-Zentrum Dresden-RossendorfUNSPECIFIEDUNSPECIFIED
Deinert, Jan-ChristophHelmholtz-Zentrum Dresden-RossendorfUNSPECIFIEDUNSPECIFIED
Ilyakov, IgorHelmholtz-Zentrum Dresden-RossendorfUNSPECIFIEDUNSPECIFIED
Chen, MinHelmholtz-Zentrum Dresden-RossendorfUNSPECIFIEDUNSPECIFIED
Ponomaryov, SergeyHelmholtz-Zentrum Dresden-RossendorfUNSPECIFIEDUNSPECIFIED
Pavlov, SergeyUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Abrosimov, N. V.Leibniz-Institut für Kristallzüchtung (IKZ), BerlinUNSPECIFIEDUNSPECIFIED
Jungemann, ChristophInstitut für Theoretische Elektrotechnik, RWTH AachenUNSPECIFIEDUNSPECIFIED
Roskos, Hartmut G.Physikalisches Institut, Goethe-Universität FrankfurtUNSPECIFIEDUNSPECIFIED
Thomson, Mark D.Physikalisches Institut, Goethe-Universität FrankfurtUNSPECIFIEDUNSPECIFIED
Date:9 November 2023
Journal or Publication Title:Physical Review Research
Refereed publication:Yes
Open Access:Yes
Gold Open Access:Yes
In SCOPUS:Yes
In ISI Web of Science:Yes
Volume:5
DOI:10.1103/PhysRevResearch.5.043141
Page Range:043141
Publisher:American Physical Society
ISSN:2643-1564
Status:Published
Keywords:high hermonic generation, silicon, TELBE
HGF - Research field:Aeronautics, Space and Transport
HGF - Program:Space
HGF - Program Themes:Space System Technology
DLR - Research area:Raumfahrt
DLR - Program:R SY - Space System Technology
DLR - Research theme (Project):R - Detectors for optical instruments
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Optical Sensor Systems > Terahertz and Laser Spectroscopy
Deposited By: Pavlov, Dr. Sergey
Deposited On:15 Dec 2023 09:00
Last Modified:29 Jan 2024 13:02

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